{"id":{"repo_id":"aachen","oai_identifier":"oai:publications.rwth-aachen.de:61049"},"canonical_url":"https://search.dev.ndltd.org/etd/aachen/oai:publications.rwth-aachen.de:61049","repository":{"repo_id":"aachen","name":"RWTH Aachen University","base_url":"https://publications.rwth-aachen.de/oai2d"},"display":{"title":"Untersuchung der Relaxation elastischer Spannungen durch Helium-Implantation und thermische Behandlung in Si 1-x Ge x / Si-Heterostrukturen","abstract":"The present work is investigating the relaxation of elastic stresses in Si1-xGex/Si-heterostructures after helium implantation and thermal annealing. Particular attention is directed onto the interplay of helium diffusion and the nucleation and movement of dislocation loops leading to the relaxation of elastic stresses.Various methods based on ion scattering as well as transmission electron microscopy have been utilised for the investigations. The experiments have been performed on CVD grown pseudomorphic Si1-xGex layers with thicknesses between 100 nm and 200 nm and germanium contents between 20 at% and 27 at%. Within the Implantation step Helium ions with doses in an order of 10^16 cm^-2 were chosen. The implantation energy was adopted to the heterostructure resulting into an Implantation depth corresponding to twice the layer thickness.","abstract_html":"The present work is investigating the relaxation of elastic stresses in Si1-xGex/Si-heterostructures after helium implantation and thermal annealing. Particular attention is directed onto the interplay of helium diffusion and the nucleation and movement of dislocation loops leading to the relaxation of elastic stresses.Various methods based on ion scattering as well as transmission electron microscopy have been utilised for the investigations. The experiments have been performed on CVD grown pseudomorphic Si1-xGex layers with thicknesses between 100 nm and 200 nm and germanium contents between 20 at% and 27 at%. Within the Implantation step Helium ions with doses in an order of 10^16 cm^-2 were chosen. The implantation energy was adopted to the heterostructure resulting into an Implantation depth corresponding to twice the layer thickness.","abstract_has_math":false,"creators":["Hüging, Norbert"],"institution":"Publikationsserver der RWTH Aachen University","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Urban, Knut"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2006,"date_issued":"2006","date_published":"2006","updated_at":"2026-07-30T19:43:02Z","subjects":["info:eu-repo/classification/ddc/530","Physik","Helium","Dünne Schicht","Silicium","Germanium","Heterostruktur","Spannungsrelaxation","Heliumdichte","Versetzungsnukleation","elastische Spannungen","thermische Behandlung"],"languages":["ger"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22"],"render_values":[{"text":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22","href":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22","code":true}]}]},"links":{"outbound_url":"https://publications.rwth-aachen.de/record/61049","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Urban, Knut"]},{"key":"dc:creator","label":"Author","values":["Hüging, Norbert"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:coverage","label":"Dc Coverage","values":["DE"]},{"key":"dc:date","label":"Dc Date","values":["2006"]},{"key":"dc:publisher","label":"Institution","values":["Publikationsserver der RWTH Aachen University"]},{"key":"dc:relation","label":"Dc Relation","values":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-15295"]},{"key":"dc:type","label":"Dc Type","values":["info:eu-repo/semantics/doctoralThesis","info:eu-repo/semantics/publishedVersion"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["info:eu-repo/classification/ddc/530","Physik","Helium","Dünne Schicht","Silicium","Germanium","Heterostruktur","Spannungsrelaxation","Heliumdichte","Versetzungsnukleation","elastische Spannungen","thermische Behandlung"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["ger"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://publications.rwth-aachen.de/record/61049","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The present work is investigating the relaxation of elastic stresses in Si1-xGex/Si-heterostructures after helium implantation and thermal annealing. Particular attention is directed onto the interplay of helium diffusion and the nucleation and movement of dislocation loops leading to the relaxation of elastic stresses.Various methods based on ion scattering as well as transmission electron microscopy have been utilised for the investigations. The experiments have been performed on CVD grown pseudomorphic Si1-xGex layers with thicknesses between 100 nm and 200 nm and germanium contents between 20 at% and 27 at%. Within the Implantation step Helium ions with doses in an order of 10^16 cm^-2 were chosen. The implantation energy was adopted to the heterostructure resulting into an Implantation depth corresponding to twice the layer thickness."]},{"key":"dc:source","label":"Dc Source","values":["Aachen : Publikationsserver der RWTH Aachen University IX, 156 S. : Ill., graph. Darst. (2006). = Aachen, Techn. Hochsch., Diss., 2006"]},{"key":"dc:title","label":"Title","values":["Untersuchung der Relaxation elastischer Spannungen durch Helium-Implantation und thermische Behandlung in Si 1-x Ge x / Si-Heterostrukturen"]}]}],"canonical_facts":{"dc:contributor":["Urban, Knut"],"dc:coverage":["DE"],"dc:creator":["Hüging, Norbert"],"dc:date":["2006"],"dc:description":["The present work is investigating the relaxation of elastic stresses in Si1-xGex/Si-heterostructures after helium implantation and thermal annealing. Particular attention is directed onto the interplay of helium diffusion and the nucleation and movement of dislocation loops leading to the relaxation of elastic stresses.Various methods based on ion scattering as well as transmission electron microscopy have been utilised for the investigations. The experiments have been performed on CVD grown pseudomorphic Si1-xGex layers with thicknesses between 100 nm and 200 nm and germanium contents between 20 at% and 27 at%. Within the Implantation step Helium ions with doses in an order of 10^16 cm^-2 were chosen. The implantation energy was adopted to the heterostructure resulting into an Implantation depth corresponding to twice the layer thickness."],"dc:identifier":["https://publications.rwth-aachen.de/record/61049","https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-122733%22"],"dc:language":["ger"],"dc:publisher":["Publikationsserver der RWTH Aachen University"],"dc:relation":["info:eu-repo/semantics/altIdentifier/urn/urn:nbn:de:hbz:82-opus-15295"],"dc:rights":["info:eu-repo/semantics/openAccess"],"dc:source":["Aachen : Publikationsserver der RWTH Aachen University IX, 156 S. : Ill., graph. Darst. (2006). = Aachen, Techn. 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