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Washington University in St. Louis

Single-step, Atmospheric Pressure Chemical Vapor Deposition of Methylammonium Bismuth Iodide Thin Films

Abstract

dc:description.abstract

<p>Lead halide perovskites (CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> and its variants) are promising solar cell absorber materials. Though the reported power conversion efficiencies of lead halide perovskite solar cells (up to 21%) are competitive with commercial silicon solar cells, lead toxicity in these perovskites present a challenge to further scale-up and eventual commercialization. Recently, bismuth (Bi<sup>3+</sup>) based organic halide perovskite has drawn attention as a substitution for lead-free perovskites, since it is a non-toxic 6p-block element, isoelectronic with Pb<sup>2+</sup>. Methylammonium bismuth iodide ((CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>) is reported for its non-toxic constituents and favorable optical band gap, thus making it a promising light absorber material. However, manufacturing ready, scale-up processes have not been developed for this compound and this presents a significant roadblock in integrating low-cost, non-toxic Bi-based perovskites into modern solar cell devices. Here, we report a single step, atmospheric pressure, chemical vapor deposition (CVD) process for (CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>. Atmospheric CVD addresses the need for rapid deposition across large area substrates, thus making the deposition of (CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> thin films manufacturing-scalable. The precursors used are bismuth iodide (BiI<sub>3</sub>) and methylammonium iodide (CH<sub>3</sub>NH<sub>3</sub>I) which are sublimated and subsequently deposited inside a tube furnace reactor with a well-controlled temperature profile. Extensive characterization is conducted via grazing incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, cyclic voltammetry, UV-vis spectroscopy and variable temperature Hall measurements. Structural and electronic stability of (CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> films in ambient are measured and degradation mechanisms elucidated.</p>

Degree

thesis:*
Name thesis:degree_name
Master of Science (MS)
Level thesis:degree_level
Thesis
Discipline thesis:degree_discipline
Mechanical Engineering & Materials Science
Year dc:date.available
2017

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Chen, Xiao
Contributors dc:contributor
  • Parag, Banerjee
  • Bryce Sadtler Srikanth Singamaneni

Subjects

dc:subject × 6

Rights

dc:rights
Statement dc:rights
  • I have not registered my thesis with the U.S. Copyright Office, and do not intend to.
Language dc:language
English (en)

Identifiers

dc:identifier.*
OAI identifier oai:identifier
oai:openscholarship.wustl.edu:eng_etds-1253

Chain of custody

source
Harvested from
Washington University in St. Louis
Base URL
openscholarship.wustl.edu/do/oai/
Last updated
2026-07-24
Source record
OAI-PMH GetRecord
citation

Chen, Xiao. Single-step, Atmospheric Pressure Chemical Vapor Deposition of Methylammonium Bismuth Iodide Thin Films. Thesis thesis, 2017. https://doi.org/10.7936/K72V2FHB