{"id":{"repo_id":"washington","oai_identifier":"oai:digital.lib.washington.edu:1773/37223"},"canonical_url":"https://search.dev.ndltd.org/etd/washington/oai:digital.lib.washington.edu:1773/37223","repository":{"repo_id":"washington","name":"University of Washington","base_url":"https://digital.lib.washington.edu/server/oai/request"},"display":{"title":"Optical and Spin Properties of Defect-Bound Excitons in Semiconductors","abstract":"The physical properties of semiconductor defects are highly relevant for future quantum technologies and current semiconductor device performance. Optical spectroscopy is a powerful tool for investigating a wide variety of defect properties, motivating us to develop a generalized theory of spontaneous emission from multi-carrier bound excitons. We apply this theory to the neutral-acceptor bound exciton, finding three distinct radiative lifetimes. Next, we utilize our knowledge of bound-exciton transitions to measure the spin lifetime of donor-bound electrons. These measurements motivate the use of shallow-dopant-bound spins as qubits for quantum information, and we explore possible pathways for isolating a single shallow donor or acceptor. Lastly, we investigate excitons bound to stacking faults, a common extended semiconductor defect, finding ultra-homogeneous linewidths and a giant exciton dipole moment. These feature imply that stacking faults could potentially be useful for studying many-body physics in strongly-interacting exciton gases.","abstract_html":"The physical properties of semiconductor defects are highly relevant for future quantum technologies and current semiconductor device performance. Optical spectroscopy is a powerful tool for investigating a wide variety of defect properties, motivating us to develop a generalized theory of spontaneous emission from multi-carrier bound excitons. We apply this theory to the neutral-acceptor bound exciton, finding three distinct radiative lifetimes. Next, we utilize our knowledge of bound-exciton transitions to measure the spin lifetime of donor-bound electrons. These measurements motivate the use of shallow-dopant-bound spins as qubits for quantum information, and we explore possible pathways for isolating a single shallow donor or acceptor. Lastly, we investigate excitons bound to stacking faults, a common extended semiconductor defect, finding ultra-homogeneous linewidths and a giant exciton dipole moment. These feature imply that stacking faults could potentially be useful for studying many-body physics in strongly-interacting exciton gases.","abstract_has_math":false,"creators":["Karin, Todd"],"institution":null,"degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":["Fu, Kai-Mei C"],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-09-22","date_published":"2016-09-22","updated_at":"2026-07-24T05:58:07Z","subjects":["acceptor","donor","GaAs","radiative","spin","stacking fault"],"languages":["en_US"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/1773/37223","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Fu, Kai-Mei C"]},{"key":"dc:creator","label":"Author","values":["Karin, Todd"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2016-09-22T15:49:10Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2016-09-22T15:49:10Z"]},{"key":"dc:date.issued","label":"Date","values":["2016-09-22"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["acceptor","donor","GaAs","radiative","spin","stacking fault"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["Karin_washington_0250E_16522.pdf"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/1773/37223"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thesis (Ph.D.)--University of Washington, 2016-08"]},{"key":"dc:description.abstract","label":"Abstract","values":["The physical properties of semiconductor defects are highly relevant for future quantum technologies and current semiconductor device performance. Optical spectroscopy is a powerful tool for investigating a wide variety of defect properties, motivating us to develop a generalized theory of spontaneous emission from multi-carrier bound excitons. We apply this theory to the neutral-acceptor bound exciton, finding three distinct radiative lifetimes. Next, we utilize our knowledge of bound-exciton transitions to measure the spin lifetime of donor-bound electrons. These measurements motivate the use of shallow-dopant-bound spins as qubits for quantum information, and we explore possible pathways for isolating a single shallow donor or acceptor. Lastly, we investigate excitons bound to stacking faults, a common extended semiconductor defect, finding ultra-homogeneous linewidths and a giant exciton dipole moment. These feature imply that stacking faults could potentially be useful for studying many-body physics in strongly-interacting exciton gases."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Optical and Spin Properties of Defect-Bound Excitons in Semiconductors"]}]}],"canonical_facts":{"dc:contributor.advisor":["Fu, Kai-Mei C"],"dc:creator":["Karin, Todd"],"dc:date.accessioned":["2016-09-22T15:49:10Z"],"dc:date.available":["2016-09-22T15:49:10Z"],"dc:date.issued":["2016-09-22"],"dc:description":["Thesis (Ph.D.)--University of Washington, 2016-08"],"dc:description.abstract":["The physical properties of semiconductor defects are highly relevant for future quantum technologies and current semiconductor device performance. Optical spectroscopy is a powerful tool for investigating a wide variety of defect properties, motivating us to develop a generalized theory of spontaneous emission from multi-carrier bound excitons. We apply this theory to the neutral-acceptor bound exciton, finding three distinct radiative lifetimes. Next, we utilize our knowledge of bound-exciton transitions to measure the spin lifetime of donor-bound electrons. These measurements motivate the use of shallow-dopant-bound spins as qubits for quantum information, and we explore possible pathways for isolating a single shallow donor or acceptor. Lastly, we investigate excitons bound to stacking faults, a common extended semiconductor defect, finding ultra-homogeneous linewidths and a giant exciton dipole moment. These feature imply that stacking faults could potentially be useful for studying many-body physics in strongly-interacting exciton gases."],"dc:format.mimetype":["application/pdf"],"dc:identifier.other":["Karin_washington_0250E_16522.pdf"],"dc:identifier.uri":["http://hdl.handle.net/1773/37223"],"dc:language.iso":["en_US"],"dc:subject":["acceptor","donor","GaAs","radiative","spin","stacking fault"],"dc:title":["Optical and Spin Properties of Defect-Bound Excitons in Semiconductors"],"dc:type":["Thesis"]},"updated_at":"2026-07-24T05:58:07Z"}