Insulated gate transistors: characteristics and application to motor control

A detailed study of a MOS-Bipolar power semiconductor known as the IGT or COMFET or GEMFET was undertaken. The major disadvantage of the device was identified as latching and the effect of various factors affecting latching were determined. The experiments performed determined susceptibility to latch under various conditions of temperature, rate of rise of gate-source voltage and rate of fall of drain-source voltage. A 340V, lOA three phase GEMFET bridge inverter using a pulse width modulation scheme to drive a permanent magnet brushless dc motor was successfully fabricated. The simplicity of the gate drive circuit and the low cost of the device make the IGT ideal for motor drive applications.

Name thesis:degree_name

M.S.

Level thesis:degree_level

masters

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Polytechnic Institute and State University

Year dc:date.issued

1984

Author dc:creator

• Sukumar, Vajapeyam

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en_US

Handle dc:identifier.uri

http://hdl.handle.net/10919/87641

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/87641