Abstract
dc:description.abstractAs the oil and gas industry continues to explore higher temperature environments, electronics that operate at those temperatures without additional cooling become critical. Additionally, current communications systems cannot support the higher data-rates being offered by advancements in sensor technology. An RF modem would be capable of supplying the necessary bandwidth to support the higher data-rate. A voltage-controlled oscillator is an essential part of an RF modem. This thesis presents a 2.336-2.402 GHz voltage-controlled oscillator constructed with 0.25 μm GaN-on-SiC technology high electron mobility transistor (HEMTs). The measured operating temperature range was from 25°C to 225°C. A minimum tuning range of 66 MHz, less than 20% variation in output power, and harmonics more than 20 dB down from the fundamental is observed. The phase noise is between -88 and -101 dBc/Hz at 100 kHz offset at 225°C. This is the highest frequency oscillator that operates simultaneously at high temperatures reported in literature.
Degree
thesis:*- Name thesis:degree_name
- Master of Science
- Level thesis:degree_level
- masters
- Discipline thesis:degree_discipline
- Electrical Engineering
- Department dc:contributor.department
- Electrical Engineering
- Grantor dc:publisher
- Virginia Tech
- Year dc:date.issued
- 2018
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Turner, Nathan Isaac
- Chair dc:contributor.committeechair
-
- Ha, Dong Sam
- Committee members dc:contributor.committeemember
-
- Yi, Yang
- Baumann, William T.
Subjects
dc:subject × 5Rights
dc:rights- Statement dc:rights
-
- In Copyright
- Licence dc:rights.uri
Identifiers
dc:identifier.*- Dc Identifier Other
- vt_gsexam:16829
- OAI identifier oai:identifier
- oai:vtechworks.lib.vt.edu:10919/84935