Millimeter-Wave Harmonically-Tuned Silicon Power Amplifiers for High Efficiency

This works demonstrates the feasibility of the inverse-Class-F harmonic tuning approach for mm-wave silicon PAs. This research addresses the challenges and limitations of the high efficiency inverse-Class-F PAs for mm-wave silicon technology. This work proposes different load networks to mitigate the challenges which are verified with implementations at different mm-wave frequencies with the highest power efficiency performances reported so far: PAE= 50% @ 24 GHz, PAE = 43% @ 41 GHz, and PAE = 23% @ 94 GHz. The design methodology and detailed analysis of the proposed load networks presented and verified with implementation and measured results.

Name thesis:degree_name

Ph. D.

Level thesis:degree_level

doctoral

Discipline thesis:degree_discipline

Computer Engineering

Department dc:contributor.department

Electrical and ComputerEngineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

2016

Author dc:creator

• Mortazavi, Seyed Yahya

Chair dc:contributor.committeechair

• Koh, Kwang-Jin

Committee members dc:contributor.committeemember

• Raman, Sanjay
• Buehrer, R. Michael
• Ha, Dong S.
• Nguyen, Vinh

• Class-F
• class-F-1
• 5G
• harmonic tuned power amplifier
• inverse class F
• 28 GHz
• 38 GHz
• Ka-band PA
• SiGe PA

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Dc Identifier Other

vt_gsexam:8597

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/82440