{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/80195"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/80195","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"The Seebeck effect in thin film CdS and ZnₓCd₁₋ₓS","abstract":"Seebeck and resistivity measurements are made on thin film CdS and Zn<sub>x</sub>Cd<sub>1-x</sub>S samples in an apparatus of original design over a temperature range from near liquid nitrogen temperature to room temperature. The temperature dependence of mobility and carrier concentration is studied in CdS films of varying thicknesses (3 µm to 14.0 µm) and in Zn<sub>x</sub>Cd<sub>1-x</sub>S films of varying zinc content (0 ≤ x ≤ .35) . Scattering is found to be grain boundary dependent in all films except the thinest CdS film measured (3.0 µm) in which lattice scattering dominates. The grain boundary barrier height increases with film thickness in CdS films due to a decrease in carrier concentration as film thickness increases making electron traps at the grain boundary influential. As the zinc concentration is increased the carrier concentration decreases and the grain boundary barrier height increases as seen in the CdS films.","abstract_html":"Seebeck and resistivity measurements are made on thin film CdS and Zn&lt;sub&gt;x&lt;/sub&gt;Cd&lt;sub&gt;1-x&lt;/sub&gt;S samples in an apparatus of original design over a temperature range from near liquid nitrogen temperature to room temperature. The temperature dependence of mobility and carrier concentration is studied in CdS films of varying thicknesses (3 µm to 14.0 µm) and in Zn&lt;sub&gt;x&lt;/sub&gt;Cd&lt;sub&gt;1-x&lt;/sub&gt;S films of varying zinc content (0 ≤ x ≤ .35) . Scattering is found to be grain boundary dependent in all films except the thinest CdS film measured (3.0 µm) in which lattice scattering dominates. The grain boundary barrier height increases with film thickness in CdS films due to a decrease in carrier concentration as film thickness increases making electron traps at the grain boundary influential. As the zinc concentration is increased the carrier concentration decreases and the grain boundary barrier height increases as seen in the CdS films.","abstract_has_math":false,"creators":["Moore, Scott Preston"],"institution":"Virginia Polytechnic Institute and State University","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Materials Engineering","degree_department":"Materials Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1982,"date_issued":"1982","date_published":"1982","updated_at":"2026-07-22T22:20:32Z","subjects":[],"languages":["en_US"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10919/80195","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.department","label":"Department","values":["Materials Engineering"]},{"key":"dc:creator","label":"Author","values":["Moore, Scott Preston"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2017-11-09T21:31:35Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2017-11-09T21:31:35Z"]},{"key":"dc:date.issued","label":"Date","values":["1982"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Polytechnic Institute and State University"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]},{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/80195"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Seebeck and resistivity measurements are made on thin film CdS and Zn<sub>x</sub>Cd<sub>1-x</sub>S samples in an apparatus of original design over a temperature range from near liquid nitrogen temperature to room temperature. The temperature dependence of mobility and carrier concentration is studied in CdS films of varying thicknesses (3 µm to 14.0 µm) and in Zn<sub>x</sub>Cd<sub>1-x</sub>S films of varying zinc content (0 ≤ x ≤ .35) . Scattering is found to be grain boundary dependent in all films except the thinest CdS film measured (3.0 µm) in which lattice scattering dominates. The grain boundary barrier height increases with film thickness in CdS films due to a decrease in carrier concentration as film thickness increases making electron traps at the grain boundary influential. As the zinc concentration is increased the carrier concentration decreases and the grain boundary barrier height increases as seen in the CdS films."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["The Seebeck effect in thin film CdS and ZnₓCd₁₋ₓS"]}]}],"canonical_facts":{"dc:contributor.department":["Materials Engineering"],"dc:creator":["Moore, Scott Preston"],"dc:date.accessioned":["2017-11-09T21:31:35Z"],"dc:date.available":["2017-11-09T21:31:35Z"],"dc:date.issued":["1982"],"dc:description.abstract":["Seebeck and resistivity measurements are made on thin film CdS and Zn<sub>x</sub>Cd<sub>1-x</sub>S samples in an apparatus of original design over a temperature range from near liquid nitrogen temperature to room temperature. The temperature dependence of mobility and carrier concentration is studied in CdS films of varying thicknesses (3 µm to 14.0 µm) and in Zn<sub>x</sub>Cd<sub>1-x</sub>S films of varying zinc content (0 ≤ x ≤ .35) . Scattering is found to be grain boundary dependent in all films except the thinest CdS film measured (3.0 µm) in which lattice scattering dominates. The grain boundary barrier height increases with film thickness in CdS films due to a decrease in carrier concentration as film thickness increases making electron traps at the grain boundary influential. As the zinc concentration is increased the carrier concentration decreases and the grain boundary barrier height increases as seen in the CdS films."],"dc:description.degree":["Master of Science"],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/10919/80195"],"dc:language.iso":["en_US"],"dc:publisher":["Virginia Polytechnic Institute and State University"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["The Seebeck effect in thin film CdS and ZnₓCd₁₋ₓS"],"dc:type":["Thesis"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Materials Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:20:32Z"}