{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/78388"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/78388","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"A High Temperature Wideband Low Noise Amplifier","abstract":"As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, gain of 16.1 dB, and P1dB of 19.1 dBm from 230.5MHz — 285.5MHz. The maximum variation with temperature from 25°C to 230°C is 1.53dB for NF and 0.65dB for gain.","abstract_html":"As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, gain of 16.1 dB, and P1dB of 19.1 dBm from 230.5MHz — 285.5MHz. The maximum variation with temperature from 25°C to 230°C is 1.53dB for NF and 0.65dB for gain.","abstract_has_math":false,"creators":["Cunningham, Michael Lawrence"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Ha, Dong Sam","Koh, Kwang-Jin"],"committee_members":["Lu, Guo Quan"],"year":2016,"date_issued":"2016-01-27","date_published":"2016-01-27","updated_at":"2026-07-22T22:20:11Z","subjects":["high temperature","extreme environment","low noise amplifier","GaN on SiC","downhole communications system"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["vt_gsexam:7028"],"render_values":[{"text":"vt_gsexam:7028","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/78388","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Ha, Dong Sam","Koh, Kwang-Jin"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Lu, Guo Quan"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Cunningham, Michael Lawrence"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2017-07-21T06:00:22Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2017-07-21T06:00:22Z"]},{"key":"dc:date.issued","label":"Date","values":["2016-01-27"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["high temperature","extreme environment","low noise amplifier","GaN on SiC","downhole communications system"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["vt_gsexam:7028"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/78388"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, gain of 16.1 dB, and P1dB of 19.1 dBm from 230.5MHz — 285.5MHz. The maximum variation with temperature from 25°C to 230°C is 1.53dB for NF and 0.65dB for gain."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["ETD"]},{"key":"dc:title","label":"Title","values":["A High Temperature Wideband Low Noise Amplifier"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Ha, Dong Sam","Koh, Kwang-Jin"],"dc:contributor.committeemember":["Lu, Guo Quan"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Cunningham, Michael Lawrence"],"dc:date.accessioned":["2017-07-21T06:00:22Z"],"dc:date.available":["2017-07-21T06:00:22Z"],"dc:date.issued":["2016-01-27"],"dc:description.abstract":["As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. 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