{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/54357"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/54357","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Optical studies of ion-bombarded gallium arsenide","abstract":"The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ<sub>μ</sub> = Γ₀ + AL⁻¹, where Γ₀ (Γ<sub>μ</sub>) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium.","abstract_html":"The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ&lt;sub&gt;μ&lt;/sub&gt; = Γ₀ + AL⁻¹, where Γ₀ (Γ&lt;sub&gt;μ&lt;/sub&gt;) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium.","abstract_has_math":false,"creators":["Feng, Guofu"],"institution":"Virginia Polytechnic Institute and State University","degree_name":"Ph. D.","degree_level":"doctoral","degree_discipline":"Physics","degree_department":"Physics","school":null,"contributors":[],"advisors":[],"committee_chairs":["Zallen, Richard H."],"committee_members":["Ritter, Alfred \"Jimmy\"","Burton, Larry C.","Indebetouw, Guy J.","Williams, Clayton D."],"year":1989,"date_issued":"1989","date_published":"1989","updated_at":"2026-07-22T22:19:19Z","subjects":[],"languages":["en_US"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10919/54357","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Zallen, Richard H."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Ritter, Alfred \"Jimmy\"","Burton, Larry C.","Indebetouw, Guy J.","Williams, Clayton D."]},{"key":"dc:contributor.department","label":"Department","values":["Physics"]},{"key":"dc:creator","label":"Author","values":["Feng, Guofu"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2015-07-09T20:43:50Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2015-07-09T20:43:50Z"]},{"key":"dc:date.issued","label":"Date","values":["1989"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Polytechnic Institute and State University"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["doctoral"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph. 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Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ<sub>μ</sub> = Γ₀ + AL⁻¹, where Γ₀ (Γ<sub>μ</sub>) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Ph. D."]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Optical studies of ion-bombarded gallium arsenide"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Zallen, Richard H."],"dc:contributor.committeemember":["Ritter, Alfred \"Jimmy\"","Burton, Larry C.","Indebetouw, Guy J.","Williams, Clayton D."],"dc:contributor.department":["Physics"],"dc:creator":["Feng, Guofu"],"dc:date.accessioned":["2015-07-09T20:43:50Z"],"dc:date.available":["2015-07-09T20:43:50Z"],"dc:date.issued":["1989"],"dc:description.abstract":["The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered GaAs. The optical properties of μ-GaAs differ appreciably from those of the bulk crystal, the difference increasing with L⁻¹, the inverse of the characteristic size of the microcrystals. The linewidths of the prominent interband features E₁, E₁+∆₁, and E₂ increase linearly and rapidly with inverse microcrystal size: Γ<sub>μ</sub> = Γ₀ + AL⁻¹, where Γ₀ (Γ<sub>μ</sub>) is the linewidth in the bulk crystal (μ-GaAs), and A is a constant. A simple theory is proposed which semi-quantitatively accounts for the observed size effects. Small microcrystal size implies a short time for an excited carrier to reach, and to be scattered by, the microcrystal boundary, thus limiting the excited-state lifetime and broadening the excited-state energy. An alternative uncertainty-principle argument is also given in terms of the confinement-induced k-space broadening of electron states. The near-surface structural disorder in Ar⁺-etched GaAs has been investigated using a combination of Raman scattering and optical reflectivity measurements. The longitudinal optical (LO) Raman mode in the ion-damaged medium preserves its crystalline lineshape, indicating that the crystalline long-range order is retained in the disordered structure. The structural damage is depth-profiled with LO Raman intensity measurements together with wet chemical etching. A graded damage model proposed in the work well explains the observed LO intensity in the ion-damaged, chemical-etched GaAs. The reflectivity measurements qualitatively support the Raman scattering findings. In addition, the reflectivity spectrum exhibits a red-shift of the peaks associated with the interband electronic transitions. Such a peak shift is likely to arise from the electron-defect interaction in the disordered surface medium."],"dc:description.degree":["Ph. D."],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/10919/54357"],"dc:language.iso":["en_US"],"dc:publisher":["Virginia Polytechnic Institute and State University"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Optical studies of ion-bombarded gallium arsenide"],"dc:type":["Dissertation"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["doctoral"],"thesis:degree_name":["Ph. D."],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:19:19Z"}