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Virginia Polytechnic Institute and State University
MOS-bipolar composite power switching devices
Abstract
dc:description.abstractTwo MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.
Degree
thesis:*- Name thesis:degree_name
- Ph. D.
- Level thesis:degree_level
- doctoral
- Discipline thesis:degree_discipline
- Electrical Engineering
- Department dc:contributor.department
- Electrical Engineering
- Grantor dc:publisher
- Virginia Polytechnic Institute and State University
- Year dc:date.issued
- 1985
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Chin, Shaoan
- Chair dc:contributor.committeechair
-
- Chen, De Yu "Dan"
- Committee members dc:contributor.committeemember
-
- Lee, Fred
- Burton, Larry C.
- Stephenson, F. William
- Rutland, Leon W. Jr.
Rights
dc:rights- Statement dc:rights
-
- In Copyright
- Licence dc:rights.uri
- Language dc:language.iso
- en_US
Identifiers
dc:identifier.*- Handle dc:identifier.uri
- http://hdl.handle.net/10919/54275
- OAI identifier oai:identifier
- oai:vtechworks.lib.vt.edu:10919/54275