{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/53025"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/53025","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"A theoretical and experimental investigation of the annular jet ground effect machine","abstract":"In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and the two irradiated samples at room temperature. Absorption due to free carriers depressed at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 x 10⁵ ohm-om.","abstract_html":"In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and the two irradiated samples at room temperature. Absorption due to free carriers depressed at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 x 10⁵ ohm-om.","abstract_has_math":false,"creators":["Graham, William Alexander"],"institution":"Virginia Polytechnic Institute","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Aeronautical Engineering","degree_department":"Aeronautical Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1960,"date_issued":"1960","date_published":"1960","updated_at":"2026-07-22T22:18:47Z","subjects":[],"languages":["en_US"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/10919/53025","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.department","label":"Department","values":["Aeronautical Engineering"]},{"key":"dc:creator","label":"Author","values":["Graham, William Alexander"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2015-06-23T19:08:03Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2015-06-23T19:08:03Z"]},{"key":"dc:date.issued","label":"Date","values":["1960"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Polytechnic Institute"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Aeronautical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en_US"]},{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/53025"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and the two irradiated samples at room temperature. Absorption due to free carriers depressed at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 x 10⁵ ohm-om."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["A theoretical and experimental investigation of the annular jet ground effect machine"]}]}],"canonical_facts":{"dc:contributor.department":["Aeronautical Engineering"],"dc:creator":["Graham, William Alexander"],"dc:date.accessioned":["2015-06-23T19:08:03Z"],"dc:date.available":["2015-06-23T19:08:03Z"],"dc:date.issued":["1960"],"dc:description.abstract":["In this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and the two irradiated samples at room temperature. Absorption due to free carriers depressed at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 x 10⁵ ohm-om."],"dc:description.degree":["Master of Science"],"dc:format.mimetype":["application/pdf"],"dc:identifier.uri":["http://hdl.handle.net/10919/53025"],"dc:language.iso":["en_US"],"dc:publisher":["Virginia Polytechnic Institute"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["A theoretical and experimental investigation of the annular jet ground effect machine"],"dc:type":["Thesis"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Aeronautical Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute"]},"updated_at":"2026-07-22T22:18:47Z"}