{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/46433"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/46433","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Metalorganic chemical vapor deposition of metal oxides","abstract":"Ruthenium dioxide, zirconium dioxide and bismuth titanate thin films were deposited on Si, sapphire disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO₂, pure Ru, or a RuO₂ + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO₂ films were specular, crack-free, and adhered well on the substrates. The Auger electron spectroscopy depth profile showed a good composition uniformity across the bulk of the films. The MOCVD RuO₂ thin films exhibited resistivities as low as 60 <i>μ</i>Ω-cm. In addition, the reflectance of RuO₂ in the NIR region showed a metallic character. Zr(thd)₄ was synthesized and the process was optimized. Purity of Zr(thd)₄ was confirmed by melting point determination, carbon and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). The MOCVD ZrO₂ film deposition rates were very small (≤ 1 nm/min) for substrate temperatures below 530°C. The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO₂ phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post-deposition annealing. The optical properties of the ZrO₂ thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO₂ film. The deposition rates can be predicted well for various deposition conditions in the hot wall reactor. The deposition rates of MOCVD Bi₄Ti₃O₁₂ were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi₄Ti₃O₁₂ phase. The films were specular and showed uniform and fine-grain morphology. Optical constants as a function of wavelength were calculated from the film transmission characteristics in the UV-VIS-NIR region. The 550°C annealed film had a spontaneous polarization of 26.5 <i>μ</i>C/cm² and a coercive field of 244.3 kV/cm.","abstract_html":"Ruthenium dioxide, zirconium dioxide and bismuth titanate thin films were deposited on Si, sapphire disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO₂, pure Ru, or a RuO₂ + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO₂ films were specular, crack-free, and adhered well on the substrates. The Auger electron spectroscopy depth profile showed a good composition uniformity across the bulk of the films. The MOCVD RuO₂ thin films exhibited resistivities as low as 60 &lt;i&gt;μ&lt;/i&gt;Ω-cm. In addition, the reflectance of RuO₂ in the NIR region showed a metallic character. Zr(thd)₄ was synthesized and the process was optimized. Purity of Zr(thd)₄ was confirmed by melting point determination, carbon and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). The MOCVD ZrO₂ film deposition rates were very small (≤ 1 nm/min) for substrate temperatures below 530°C. The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO₂ phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post-deposition annealing. The optical properties of the ZrO₂ thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO₂ film. The deposition rates can be predicted well for various deposition conditions in the hot wall reactor. The deposition rates of MOCVD Bi₄Ti₃O₁₂ were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi₄Ti₃O₁₂ phase. The films were specular and showed uniform and fine-grain morphology. Optical constants as a function of wavelength were calculated from the film transmission characteristics in the UV-VIS-NIR region. The 550°C annealed film had a spontaneous polarization of 26.5 &lt;i&gt;μ&lt;/i&gt;C/cm² and a coercive field of 244.3 kV/cm.","abstract_has_math":false,"creators":["Si, Jie"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Materials Science and Engineering","degree_department":"Materials Science and Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1993,"date_issued":"1993","date_published":"1993","updated_at":"2026-07-22T22:19:06Z","subjects":[],"languages":["en"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-12302008-063204"],"render_values":[{"text":"etd-12302008-063204","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/46433","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.department","label":"Department","values":["Materials Science and Engineering"]},{"key":"dc:creator","label":"Author","values":["Si, Jie"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T21:52:38Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T21:52:38Z","2008-12-30"]},{"key":"dc:date.issued","label":"Date","values":["1993"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-12302008-063204"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/46433"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Ruthenium dioxide, zirconium dioxide and bismuth titanate thin films were deposited on Si, sapphire disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO₂, pure Ru, or a RuO₂ + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO₂ films were specular, crack-free, and adhered well on the substrates. The Auger electron spectroscopy depth profile showed a good composition uniformity across the bulk of the films. The MOCVD RuO₂ thin films exhibited resistivities as low as 60 <i>μ</i>Ω-cm. In addition, the reflectance of RuO₂ in the NIR region showed a metallic character. Zr(thd)₄ was synthesized and the process was optimized. Purity of Zr(thd)₄ was confirmed by melting point determination, carbon and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). The MOCVD ZrO₂ film deposition rates were very small (≤ 1 nm/min) for substrate temperatures below 530°C. The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO₂ phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post-deposition annealing. The optical properties of the ZrO₂ thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO₂ film. The deposition rates can be predicted well for various deposition conditions in the hot wall reactor. The deposition rates of MOCVD Bi₄Ti₃O₁₂ were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi₄Ti₃O₁₂ phase. The films were specular and showed uniform and fine-grain morphology. Optical constants as a function of wavelength were calculated from the film transmission characteristics in the UV-VIS-NIR region. The 550°C annealed film had a spontaneous polarization of 26.5 <i>μ</i>C/cm² and a coercive field of 244.3 kV/cm."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["BTD"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Metalorganic chemical vapor deposition of metal oxides"]}]}],"canonical_facts":{"dc:contributor.department":["Materials Science and Engineering"],"dc:creator":["Si, Jie"],"dc:date.accessioned":["2014-03-14T21:52:38Z"],"dc:date.available":["2014-03-14T21:52:38Z","2008-12-30"],"dc:date.issued":["1993"],"dc:description.abstract":["Ruthenium dioxide, zirconium dioxide and bismuth titanate thin films were deposited on Si, sapphire disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO₂, pure Ru, or a RuO₂ + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO₂ films were specular, crack-free, and adhered well on the substrates. The Auger electron spectroscopy depth profile showed a good composition uniformity across the bulk of the films. The MOCVD RuO₂ thin films exhibited resistivities as low as 60 <i>μ</i>Ω-cm. In addition, the reflectance of RuO₂ in the NIR region showed a metallic character. Zr(thd)₄ was synthesized and the process was optimized. Purity of Zr(thd)₄ was confirmed by melting point determination, carbon and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). The MOCVD ZrO₂ film deposition rates were very small (≤ 1 nm/min) for substrate temperatures below 530°C. The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO₂ phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post-deposition annealing. The optical properties of the ZrO₂ thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO₂ film. The deposition rates can be predicted well for various deposition conditions in the hot wall reactor. The deposition rates of MOCVD Bi₄Ti₃O₁₂ were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi₄Ti₃O₁₂ phase. The films were specular and showed uniform and fine-grain morphology. Optical constants as a function of wavelength were calculated from the film transmission characteristics in the UV-VIS-NIR region. The 550°C annealed film had a spontaneous polarization of 26.5 <i>μ</i>C/cm² and a coercive field of 244.3 kV/cm."],"dc:description.degree":["Master of Science"],"dc:format.medium":["BTD"],"dc:format.mimetype":["application/pdf"],"dc:identifier.other":["etd-12302008-063204"],"dc:identifier.uri":["http://hdl.handle.net/10919/46433"],"dc:language.iso":["en"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Metalorganic chemical vapor deposition of metal oxides"],"dc:type":["Thesis"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:19:06Z"}