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Virginia Tech

Constrained sintering of gold circuit films on rigid substrates

Abstract

dc:description.abstract

The densification behavior of porous gold films made from commercial circuit paste used in microelectronic packaging applications was studied. Constrained gold circuit films of 60-65μm thick were formed by multiple screen printing of the gold paste on rigid alumina substrates, while freestanding films were obtained by carefully peeling off gold films from the substrates after binder burn-out. Optical techniques were developed to determine the densification kinetics of the constrained and freestanding films at temperatures below 1000°C. The densification kinetics of gold films constrained on rigid substrates were observed to be significantly retarded relative to the free films, at all sintering temperatures between 650°C and 900°C studied. SEM studies revealed the microstructure of the constrained films to be much more porous than its freestanding film counterpart. Considerably higher sintering temperatures were required to obtain densities comparable to those of freestanding films. SEM studies also showed no significant difference in grain size between the sintered freestanding and constrained gold films. Inplane tensile stresses generated during constrained-film sintering, was determined to have a maximum value of 460 KPa at the sintering temperature of 750°C. The negligible difference in grain size between the sintered freestanding and constrained gold films, and the small magnitude of the measured tensile stresses, were both determined to be insufficient to account for the observed retardation in the densification kinetics of the constrained gold films. The activation energies for densification of the porous gold films during isothermal sintering, were found to be 21.54±1.03 Kcal/mole and 45.12​​±1.6 Kcal/mole for freestanding and constrained gold films respectively. These values corresponded very well with the activation energies for grain-boundary diffusion and lattice diffusion respectively, for gold as found in literature. Hence from our results of the activation energies for densification of the constrained and freestanding gold films, coupled with our studies on grain growth and stress, we suggest that the observed retardation in the densification kinetics of the constrained gold films are due to a change in the dominant diffusion mechanism during sintering of the porous gold films constrained on rigid substrates.

Degree

thesis:*
Name thesis:degree_name
Master of Science
Level thesis:degree_level
masters
Discipline thesis:degree_discipline
Materials Science and Engineering
Department dc:contributor.department
Materials Science and Engineering
Grantor dc:publisher
Virginia Tech
Year dc:date.issued
1994

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Choe, JoonWon
Chair dc:contributor.committeechair
  • Lu, Guo-Quan
Committee members dc:contributor.committeemember
  • Reynolds, William T. Jr.
  • Elshabini-Riad, Aicha A.

Rights

dc:rights
Statement dc:rights
  • In Copyright
Language dc:language.iso
en

Identifiers

dc:identifier.*
Dc Identifier Other
etd-12042009-020207
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/46100

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
related terms
citation

Choe, JoonWon. Constrained sintering of gold circuit films on rigid substrates. masters thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/46100