Degradation in lead zirconate titanate thin film capacitors for non-volatile memory applications

A study of the degradation of ferroelectric properties in Lead Zirconate Titanate (PZT) thin film capacitors is presented in this work. Metal- Ferroelectric - Metal capacitors were prepared by sputtering and metal organic decomposition (MOD) techniques. Samples with several different film thicknesses were considered in this study. Depolarization, leading to imprint has been studied at various temperatures. Changes in the dielectric properties of the capacitors as a function of the number of fatigue cycles is presented. Impedance and modulus spectroscopic techniques have been applied to study the effect of degradation on the ferroelectric thin film. It has been shown that with accurate low frequency impedance measurement equipment, new insight can be gained on the mechanisms of degradation in ferroelectric capacitors.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical Engineering

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

1994

Author dc:creator

• Bhattacharya, Mayukh

Chairs dc:contributor.committeechair

• Desu, Seshu B.
• Moore, David J.

Committee member dc:contributor.committeemember

• Athanas, Peter M.

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en

Dc Identifier Other

etd-09052009-040636

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/44583