Abstract
dc:description.abstractPortable communication systems require, in part, high-efficiency radio frequency power amplifiers (RF PA) if battery lifetime is to be conserved. Conventional amplifier classifications and definitions are presented in a unified and concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, a power output of 3 W, a battery supply voltage of 9 Vdc, and a sinusoidal-type signal to be amplified. Both classes are evaluated through recent research literature and simulated using the PSpice® computer simulation program. Class CE and class F are found to provide efficiencies exceeding 80 percent under the given system constraints.</p.
Degree
thesis:*- Name thesis:degree_name
- Master of Science
- Level thesis:degree_level
- masters
- Discipline thesis:degree_discipline
- Electrical Engineering
- Department dc:contributor.department
- Electrical Engineering
- Grantor dc:publisher
- Virginia Tech
- Year dc:date.issued
- 1992
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Kunselman, Gary L.
- Chair dc:contributor.committeechair
-
- Moore, Daniel J.
- Committee members dc:contributor.committeemember
-
- Davis, William A.
- Elshabini-Riad, Aicha A.
Rights
dc:rights- Statement dc:rights
-
- In Copyright
- Licence dc:rights.uri
- Language dc:language.iso
- en
Identifiers
dc:identifier.*- Dc Identifier Other
- etd-03122009-040933
- OAI identifier oai:identifier
- oai:vtechworks.lib.vt.edu:10919/41493