A nonlinear statistical MESFET model using low order statistics of equivalent circuit model parameter sets

A nonlinear statistical MESFET model is presented which shows good agreement with measured results. A single stage GaAs power amplifier tuned at 13.5 GHz is simulated with the model and accurately predicts output power, input return loss, and power added efficiency. Not only is nominal performance good, but the spreads of amplifier performance seen over many wafers and several lots is represented well. The model consists of capturing low order statistics (means, variances, and correlations) of equivalent circuit model parameter sets and using these to produce a continuous distribution of devices representative of those seen from manufacturing. Complete nonlinear and statistical modeling extraction software packages are also presented which allow easy investigation of many aspects of statistical models such as sensitivity of data set statistics as a function of sample size and how model parameters vary as a function of time with a given fabrication process.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical Engineering

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

1995

Author dc:creator

• Crampton, Raymond J.

Chair dc:contributor.committeechair

• Moore, Daniel J.

Committee members dc:contributor.committeemember

• Riad, Sedki Mohamed
• Lu, Guo-Quan

• computer software packages

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en

Dc Identifier Other

etd-03032009-040420

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/41351