{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/40568"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/40568","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Time domain device modeling of High Frequency Power MOSFETs","abstract":"The development of the High Frequency Power MOSFET has brought about a need for accurate models. Now that the frequency range of these MOSFETs is in domains where typically scattering parameter measurements are used, a broad band device model can prove to be extremely useful. This thesis summarizes the research performed towards the development of a wideband Gate model for the Motorola MRF162 High Frequency Power Transistor. The device theory for typical MOSFETs will be explained. This theory will lead into the development of the Power MOSFET and its associated frequency limitations. The benefits of Time Domain Techniques will be explained and how a wideband model is achieved from this technique. The result from the analysis of the measurements and the device theory is a wideband Gate model developed for the frequency range from 100MHz to 400MHz. Verification is achieved by curve matching the measured Time Domain Reflected waveforms with the simulated waveforms generated using a proprietary program Modified Transient Analysis Program (MTCAP) and by comparison of expected and simulated parasitic values.","abstract_html":"The development of the High Frequency Power MOSFET has brought about a need for accurate models. Now that the frequency range of these MOSFETs is in domains where typically scattering parameter measurements are used, a broad band device model can prove to be extremely useful. This thesis summarizes the research performed towards the development of a wideband Gate model for the Motorola MRF162 High Frequency Power Transistor. The device theory for typical MOSFETs will be explained. This theory will lead into the development of the Power MOSFET and its associated frequency limitations. The benefits of Time Domain Techniques will be explained and how a wideband model is achieved from this technique. The result from the analysis of the measurements and the device theory is a wideband Gate model developed for the frequency range from 100MHz to 400MHz. Verification is achieved by curve matching the measured Time Domain Reflected waveforms with the simulated waveforms generated using a proprietary program Modified Transient Analysis Program (MTCAP) and by comparison of expected and simulated parasitic values.","abstract_has_math":false,"creators":["Hoagland, Richard W."],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical Engineering","degree_department":"Electrical Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Elshabini-Riad, Aicha A."],"committee_members":["Moore, David J.","Riad, Sedki Mohamed"],"year":1993,"date_issued":"1993-12-15","date_published":"1993-12-15","updated_at":"2026-07-22T22:20:17Z","subjects":[],"languages":["en"],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-01102009-063443"],"render_values":[{"text":"etd-01102009-063443","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/40568","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Elshabini-Riad, Aicha A."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Moore, David J.","Riad, Sedki Mohamed"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical Engineering"]},{"key":"dc:creator","label":"Author","values":["Hoagland, Richard W."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T21:26:46Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T21:26:46Z","2009-01-10"]},{"key":"dc:date.issued","label":"Date","values":["1993-12-15"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"dc:type.dcmitype","label":"Dc Type Dcmitype","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-01102009-063443"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/40568"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The development of the High Frequency Power MOSFET has brought about a need for accurate models. Now that the frequency range of these MOSFETs is in domains where typically scattering parameter measurements are used, a broad band device model can prove to be extremely useful. This thesis summarizes the research performed towards the development of a wideband Gate model for the Motorola MRF162 High Frequency Power Transistor. The device theory for typical MOSFETs will be explained. This theory will lead into the development of the Power MOSFET and its associated frequency limitations. The benefits of Time Domain Techniques will be explained and how a wideband model is achieved from this technique. The result from the analysis of the measurements and the device theory is a wideband Gate model developed for the frequency range from 100MHz to 400MHz. Verification is achieved by curve matching the measured Time Domain Reflected waveforms with the simulated waveforms generated using a proprietary program Modified Transient Analysis Program (MTCAP) and by comparison of expected and simulated parasitic values."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:format.medium","label":"Dc Format Medium","values":["BTD"]},{"key":"dc:format.mimetype","label":"Dc Format Mimetype","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Time domain device modeling of High Frequency Power MOSFETs"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Elshabini-Riad, Aicha A."],"dc:contributor.committeemember":["Moore, David J.","Riad, Sedki Mohamed"],"dc:contributor.department":["Electrical Engineering"],"dc:creator":["Hoagland, Richard W."],"dc:date.accessioned":["2014-03-14T21:26:46Z"],"dc:date.available":["2014-03-14T21:26:46Z","2009-01-10"],"dc:date.issued":["1993-12-15"],"dc:description.abstract":["The development of the High Frequency Power MOSFET has brought about a need for accurate models. Now that the frequency range of these MOSFETs is in domains where typically scattering parameter measurements are used, a broad band device model can prove to be extremely useful. This thesis summarizes the research performed towards the development of a wideband Gate model for the Motorola MRF162 High Frequency Power Transistor. The device theory for typical MOSFETs will be explained. This theory will lead into the development of the Power MOSFET and its associated frequency limitations. The benefits of Time Domain Techniques will be explained and how a wideband model is achieved from this technique. The result from the analysis of the measurements and the device theory is a wideband Gate model developed for the frequency range from 100MHz to 400MHz. Verification is achieved by curve matching the measured Time Domain Reflected waveforms with the simulated waveforms generated using a proprietary program Modified Transient Analysis Program (MTCAP) and by comparison of expected and simulated parasitic values."],"dc:description.degree":["Master of Science"],"dc:format.medium":["BTD"],"dc:format.mimetype":["application/pdf"],"dc:identifier.other":["etd-01102009-063443"],"dc:identifier.uri":["http://hdl.handle.net/10919/40568"],"dc:language.iso":["en"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Time domain device modeling of High Frequency Power MOSFETs"],"dc:type":["Thesis"],"dc:type.dcmitype":["Text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:20:17Z"}