{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/36772"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/36772","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"The Design of an Asic Control Chip for a Forward Active Clamp Converter and the Investigation of Integratable Lateral Power Devices","abstract":"In Part I, the design of an ASIC control chip for a forward active clamp converter is presented. Integration of the control and drive circuit into one IC chip results in higher power density, higher reliability for the converter module. The designed ASIC control chip uses a 2.0 um N well Analog CMOS process, and is fabricated at MOSIS. The design procedures of the ASIC chip are explained, and experimental results are presented. Part II of the thesis focuses on the numerical investigation of several integratable lateral power devices. Lateral power devices are used in power IC designs because of their compatibility with analog & digital IC process. To obtain devices with high current density, large safe operating area, fast response and low cost is highly desirable for power ICs. In Part II of this thesis, several lateral power devices are discussed and simulated, including lateral IGBT, lateral MCT and double gate lateral MCTs. It is shown that lateral IGBT and lateral MCTs are good candidates for power IC applications.","abstract_html":"In Part I, the design of an ASIC control chip for a forward active clamp converter is presented. Integration of the control and drive circuit into one IC chip results in higher power density, higher reliability for the converter module. The designed ASIC control chip uses a 2.0 um N well Analog CMOS process, and is fabricated at MOSIS. The design procedures of the ASIC chip are explained, and experimental results are presented. Part II of the thesis focuses on the numerical investigation of several integratable lateral power devices. Lateral power devices are used in power IC designs because of their compatibility with analog & digital IC process. To obtain devices with high current density, large safe operating area, fast response and low cost is highly desirable for power ICs. In Part II of this thesis, several lateral power devices are discussed and simulated, including lateral IGBT, lateral MCT and double gate lateral MCTs. It is shown that lateral IGBT and lateral MCTs are good candidates for power IC applications.","abstract_has_math":false,"creators":["Dong, Wei"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical and Computer Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Huang, Alex Q."],"committee_members":["Chen, Dan Y.","Lee, Fred C."],"year":1997,"date_issued":"1997-10-01","date_published":"1997-10-01","updated_at":"2026-07-22T22:19:09Z","subjects":["PWM controller","ASIC","Lateral power devices","Power IC"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-51797-16187"],"render_values":[{"text":"etd-51797-16187","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/36772","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Huang, Alex Q."]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Chen, Dan Y.","Lee, Fred C."]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Dong, Wei"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T20:51:46Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T20:51:46Z","1997-10-01"]},{"key":"dc:date.issued","label":"Date","values":["1997-10-01"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["PWM controller","ASIC","Lateral power devices","Power IC"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-51797-16187"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/36772"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In Part I, the design of an ASIC control chip for a forward active clamp converter is presented. Integration of the control and drive circuit into one IC chip results in higher power density, higher reliability for the converter module. The designed ASIC control chip uses a 2.0 um N well Analog CMOS process, and is fabricated at MOSIS. The design procedures of the ASIC chip are explained, and experimental results are presented. Part II of the thesis focuses on the numerical investigation of several integratable lateral power devices. Lateral power devices are used in power IC designs because of their compatibility with analog & digital IC process. To obtain devices with high current density, large safe operating area, fast response and low cost is highly desirable for power ICs. In Part II of this thesis, several lateral power devices are discussed and simulated, including lateral IGBT, lateral MCT and double gate lateral MCTs. It is shown that lateral IGBT and lateral MCTs are good candidates for power IC applications."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:title","label":"Title","values":["The Design of an Asic Control Chip for a Forward Active Clamp Converter and the Investigation of Integratable Lateral Power Devices"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Huang, Alex Q."],"dc:contributor.committeemember":["Chen, Dan Y.","Lee, Fred C."],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Dong, Wei"],"dc:date.accessioned":["2014-03-14T20:51:46Z"],"dc:date.available":["2014-03-14T20:51:46Z","1997-10-01"],"dc:date.issued":["1997-10-01"],"dc:description.abstract":["In Part I, the design of an ASIC control chip for a forward active clamp converter is presented. 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