{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/35031"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/35031","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"Dielectric Characterization: A 3D EM Simulation Approach","abstract":"A new approach is presented that relies upon 3D electromagnetic simulation results to characterize the complex permittivity of homogeneous dielectric materials. By modeling the test fixture and obtaining a set of simulated S-parameters through an iterative solution process, the dielectric constant and loss tangent can be found. With further development, the 3D simulation results may be used to replace the need for complex theoretical analysis of the measurement geometry. The method is applied to an X-band rectangular waveguide setup, for which the theoretical S-parameters can be readily calculated. A Teflon sample, for which the dielectric properties are well-known, is used for all measurements and calculations. After presenting a detailed derivation to obtain the theoretical S-parameters, the Teflon sample is measured and compared to the theoretical results, from which the comparison shows great promise. An inverse solution algorithm is used to solve for the material properties from the experimental S-parameters. Low-frequency measurement of the Teflon sheet was performed by using a dielectric capacitor test fixture. The results show the effect of an air gap between the electrode and sample, producing serious errors.","abstract_html":"A new approach is presented that relies upon 3D electromagnetic simulation results to characterize the complex permittivity of homogeneous dielectric materials. By modeling the test fixture and obtaining a set of simulated S-parameters through an iterative solution process, the dielectric constant and loss tangent can be found. With further development, the 3D simulation results may be used to replace the need for complex theoretical analysis of the measurement geometry. The method is applied to an X-band rectangular waveguide setup, for which the theoretical S-parameters can be readily calculated. A Teflon sample, for which the dielectric properties are well-known, is used for all measurements and calculations. After presenting a detailed derivation to obtain the theoretical S-parameters, the Teflon sample is measured and compared to the theoretical results, from which the comparison shows great promise. An inverse solution algorithm is used to solve for the material properties from the experimental S-parameters. Low-frequency measurement of the Teflon sheet was performed by using a dielectric capacitor test fixture. The results show the effect of an air gap between the electrode and sample, producing serious errors.","abstract_has_math":false,"creators":["Sewall, Lyle Matthew"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical and Computer Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Riad, Sedki Mohamed"],"committee_members":["Davis, William A.","Safaai-Jazi, Ahmad"],"year":2006,"date_issued":"2006-08-23","date_published":"2006-08-23","updated_at":"2026-07-22T22:20:02Z","subjects":["Capacitor","Material","Dielectric","Waveguide","Characterization","Electromagnetic Simulation","Systematic Error","Simulator"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-09122006-150639"],"render_values":[{"text":"etd-09122006-150639","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/35031","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Riad, Sedki Mohamed"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Davis, William A.","Safaai-Jazi, Ahmad"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Sewall, Lyle Matthew"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T20:45:19Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T20:45:19Z","2006-12-18"]},{"key":"dc:date.issued","label":"Date","values":["2006-08-23"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Capacitor","Material","Dielectric","Waveguide","Characterization","Electromagnetic Simulation","Systematic Error","Simulator"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-09122006-150639"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/35031"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A new approach is presented that relies upon 3D electromagnetic simulation results to characterize the complex permittivity of homogeneous dielectric materials. By modeling the test fixture and obtaining a set of simulated S-parameters through an iterative solution process, the dielectric constant and loss tangent can be found. With further development, the 3D simulation results may be used to replace the need for complex theoretical analysis of the measurement geometry. The method is applied to an X-band rectangular waveguide setup, for which the theoretical S-parameters can be readily calculated. A Teflon sample, for which the dielectric properties are well-known, is used for all measurements and calculations. After presenting a detailed derivation to obtain the theoretical S-parameters, the Teflon sample is measured and compared to the theoretical results, from which the comparison shows great promise. An inverse solution algorithm is used to solve for the material properties from the experimental S-parameters. Low-frequency measurement of the Teflon sheet was performed by using a dielectric capacitor test fixture. The results show the effect of an air gap between the electrode and sample, producing serious errors."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:title","label":"Title","values":["Dielectric Characterization: A 3D EM Simulation Approach"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Riad, Sedki Mohamed"],"dc:contributor.committeemember":["Davis, William A.","Safaai-Jazi, Ahmad"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Sewall, Lyle Matthew"],"dc:date.accessioned":["2014-03-14T20:45:19Z"],"dc:date.available":["2014-03-14T20:45:19Z","2006-12-18"],"dc:date.issued":["2006-08-23"],"dc:description.abstract":["A new approach is presented that relies upon 3D electromagnetic simulation results to characterize the complex permittivity of homogeneous dielectric materials. By modeling the test fixture and obtaining a set of simulated S-parameters through an iterative solution process, the dielectric constant and loss tangent can be found. With further development, the 3D simulation results may be used to replace the need for complex theoretical analysis of the measurement geometry. The method is applied to an X-band rectangular waveguide setup, for which the theoretical S-parameters can be readily calculated. A Teflon sample, for which the dielectric properties are well-known, is used for all measurements and calculations. After presenting a detailed derivation to obtain the theoretical S-parameters, the Teflon sample is measured and compared to the theoretical results, from which the comparison shows great promise. An inverse solution algorithm is used to solve for the material properties from the experimental S-parameters. Low-frequency measurement of the Teflon sheet was performed by using a dielectric capacitor test fixture. The results show the effect of an air gap between the electrode and sample, producing serious errors."],"dc:description.degree":["Master of Science"],"dc:identifier.other":["etd-09122006-150639"],"dc:identifier.uri":["http://hdl.handle.net/10919/35031"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:subject":["Capacitor","Material","Dielectric","Waveguide","Characterization","Electromagnetic Simulation","Systematic Error","Simulator"],"dc:title":["Dielectric Characterization: A 3D EM Simulation Approach"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:20:02Z"}