{"id":{"repo_id":"vt","oai_identifier":"oai:vtechworks.lib.vt.edu:10919/32316"},"canonical_url":"https://search.dev.ndltd.org/etd/vt/oai:vtechworks.lib.vt.edu:10919/32316","repository":{"repo_id":"vt","name":"Virginia Tech","base_url":"https://vtechworks.lib.vt.edu/oai/request"},"display":{"title":"A SiC JFET-Based Three-Phase AC PWM Buck Rectifier","abstract":"Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter. The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings. Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients.","abstract_html":"Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter. The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings. Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients.","abstract_has_math":false,"creators":["Cass, Callaway James"],"institution":"Virginia Tech","degree_name":"Master of Science","degree_level":"masters","degree_discipline":"Electrical and Computer Engineering","degree_department":"Electrical and Computer Engineering","school":null,"contributors":[],"advisors":[],"committee_chairs":["Boroyevich, Dushan"],"committee_members":["Wang, Fei Fred","Burgos, Rolando"],"year":2007,"date_issued":"2007-02-02","date_published":"2007-02-02","updated_at":"2026-07-22T22:20:32Z","subjects":["Silicon carbide (SiC) JFET","three-phase ac","buck rectifier","charge control"],"languages":[],"rights":["In Copyright"],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-05072007-152603"],"render_values":[{"text":"etd-05072007-152603","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/10919/32316","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.committeechair","label":"Committee Chair","values":["Boroyevich, Dushan"]},{"key":"dc:contributor.committeemember","label":"Committee Member","values":["Wang, Fei Fred","Burgos, Rolando"]},{"key":"dc:contributor.department","label":"Department","values":["Electrical and Computer Engineering"]},{"key":"dc:creator","label":"Author","values":["Cass, Callaway James"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2014-03-14T20:35:29Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2014-03-14T20:35:29Z","2012-06-22"]},{"key":"dc:date.issued","label":"Date","values":["2007-02-02"]},{"key":"dc:publisher","label":"Institution","values":["Virginia Tech"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["Virginia Polytechnic Institute and State University"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Silicon carbide (SiC) JFET","three-phase ac","buck rectifier","charge control"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["In Copyright"]},{"key":"dc:rights.uri","label":"Rights URI","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.other","label":"Dc Identifier Other","values":["etd-05072007-152603"]},{"key":"dc:identifier.uri","label":"Identifier URI","values":["http://hdl.handle.net/10919/32316"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter. The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings. Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients."]},{"key":"dc:description.degree","label":"Dc Description Degree","values":["Master of Science"]},{"key":"dc:title","label":"Title","values":["A SiC JFET-Based Three-Phase AC PWM Buck Rectifier"]}]}],"canonical_facts":{"dc:contributor.committeechair":["Boroyevich, Dushan"],"dc:contributor.committeemember":["Wang, Fei Fred","Burgos, Rolando"],"dc:contributor.department":["Electrical and Computer Engineering"],"dc:creator":["Cass, Callaway James"],"dc:date.accessioned":["2014-03-14T20:35:29Z"],"dc:date.available":["2014-03-14T20:35:29Z","2012-06-22"],"dc:date.issued":["2007-02-02"],"dc:description.abstract":["Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter. The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings. Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients."],"dc:description.degree":["Master of Science"],"dc:identifier.other":["etd-05072007-152603"],"dc:identifier.uri":["http://hdl.handle.net/10919/32316"],"dc:publisher":["Virginia Tech"],"dc:rights":["In Copyright"],"dc:rights.uri":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:subject":["Silicon carbide (SiC) JFET","three-phase ac","buck rectifier","charge control"],"dc:title":["A SiC JFET-Based Three-Phase AC PWM Buck Rectifier"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["masters"],"thesis:degree_name":["Master of Science"],"thesis:institution_name":["Virginia Polytechnic Institute and State University"]},"updated_at":"2026-07-22T22:20:32Z"}