Impact of Thermal Effects and Other Material Properties on the Performance and Electro-Thermal Reliability of Resistive Random Access Memory Arrays

As the semiconductor industry grapples with escalating scaling challenges associated with the floating gate MOSFET, alternative memory technologies like Resistive Random Access Memory (ReRAM) are gaining prominence in the scientific community. Boasting a straightforward device structure, ease of fabrication, and compatibility with CMOS (Complementary Metal-oxide Semiconductor) Back-end of Line (BEOL), ReRAM stands as a leading candi- date for the next generation of non-volatile memory (NVM). ReRAM devices feature nanoionics-based filamentary switching, outperforming flash memory in terms of power consumption, scalability, retention, ON/OFF ratio, and endurance. Furthermore, integrating ReRAMs within the CMOS BEOL/low-k Cu interconnect system not only reduces latency between the connectivity constraints of logic and memory modules but also minimizes the chip footprint. However, investigations have revealed a significant concern surrounding ReRAMs—specifically, their electro-thermal reliability. This research provides evidence highlighting the critical influence of material properties, deposition effects, and thermal transport on the device's performance and reliability. Various material systems have undergone in this work scrutiny to comprehend the impact of intrinsic material properties such as thermal conductivity, specific heat capacity, thermal diffusivity, and deposition effects like surface roughness on the electroforming voltages of ReRAM devices. The reference device structure considered in this work is Cu/TaOx/Pt, which has been compared with alternative configurations involving metals like Ru and Co as potential substitutes for Pt. Additionally, a new vehicle has been introduced to quantify cell degradation resulting from thermal cross-talk in crossbar Resistive Random Access Memory (ReRAM) arrays. Furthermore, a novel methodology has been presented to predict cell degradation due to remote heating, taking into account the cell's location, the material properties of the device, and geometry of its electrodes. The experimental results presented in this study showcase filament rupture caused by remote heating, along with spontaneous filament restoration ensuing from the subsequent cooling of the ReRAM cell.

Name thesis:degree_name

Doctor of Philosophy

Level thesis:degree_level

doctoral

Discipline thesis:degree_discipline

Electrical Engineering

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

2023

Author dc:creator

• Chakraborty, Amrita

Chair dc:contributor.committeechair

• Orlowski, Mariusz Kriysztof

Committee members dc:contributor.committeemember

• De La Reelopez, Jaime
• Asryan, Levon Volodya
• Lu, Guo Quan
• Jia, Xiaoting

• resistive random access memory
• non-volatile memory
• resistive switching
• thermal cross-talk
• surface roughness
• electrode
• thin films

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en

Dc Identifier Other

vt_gsexam:39114

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/117276