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Virginia Polytechnic Institute and State University

Reactive radio frequency sputtering of iron oxide thin films for electrical resistivity characterization

Abstract

dc:description.abstract

A postulate of this research was that useful semiconductors could be made in the iron oxide thin film system by controlling the ratio of Fe<sup>2+</sup> to Fe<sup>3+</sup> ions. For the added versatility of producing all of the oxide phases from one source (target), reactive (in an oxygen/argon atmosphere) sputtering was chosen. In addition, to avoid the problems of sputtering oxides by Electron Beam evaporation or Direct Current sputtering, the recently developed technique of Radio Frequency sputtering was employed. Thus, the iron oxide thin films were produced by reactive Radio Frequency sputtering. The correlation between the electrical resistivity and the sputtering atmosphere (oxygen pressure) was made and plotted. Identification of the Fe<sup>2+</sup> to Fe<sup>3+</sup> ion ratio was impossible, but X-ray diffraction data were used to identify the iron oxide phase or phases present in each thin film. Thin films which were a mixture of oxide phases were produced and the general sputtering parameters (electrical power settings and oxygen level) required to produce these oxide mixtures have been identified. The deposition time was found to have an optimum of about ten minutes, and times in excess of this produced thin films of equivalent thickness. Differences between phase equilibria predictions and the actual phases formed during sputtering have led to the conclusion that reactive Radio Frequency sputtering of iron oxide is a non-equilibrium process.

Degree

thesis:*
Name thesis:degree_name
M. S.
Level thesis:degree_level
masters
Discipline thesis:degree_discipline
Ceramic Engineering
Department dc:contributor.department
Ceramic Engineering
Grantor dc:publisher
Virginia Polytechnic Institute and State University
Year dc:date.issued
1974

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Hackler, Cull

Rights

dc:rights
Statement dc:rights
  • In Copyright
Language dc:language.iso
en

Identifiers

dc:identifier.*
Handle dc:identifier.uri
http://hdl.handle.net/10919/114715
OAI identifier oai:identifier
oai:vtechworks.lib.vt.edu:10919/114715

Chain of custody

source
Harvested from
Virginia Tech
Base URL
vtechworks.lib.vt.edu/oai/request
Last updated
2026-07-22
Source record
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related terms
citation

Hackler, Cull. Reactive radio frequency sputtering of iron oxide thin films for electrical resistivity characterization. masters thesis, Virginia Polytechnic Institute and State University, 1974. http://hdl.handle.net/10919/114715