Measurement of transistor hybrid-[pi] parameters

This work involves the measurement of hybrid- π parameters of a transistor. A simple method of measuring these parameters with reasonable accuracy using available laboratory equipment at frequencies up to 3-MHz is discussed. The results are used to investigate the validity of the measured hybrid- π parameters by experimental measurements performed on the transistor. Various gain functions and output and input resistances are measured, and the results are compared with calculations based on the hybrid- π parameters.

Name thesis:degree_name

M.S.

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical Engineering

Department dc:contributor.department

Electrical Engineering

Grantor dc:publisher

Virginia Polytechnic Institute and State University

Year dc:date.issued

1972

Author dc:creator

• Nasser, Mohammed Hussein

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Language dc:language.iso

en

Handle dc:identifier.uri

http://hdl.handle.net/10919/114709

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/114709