Resonant Gate Drive Techniques for Power MOSFETs

With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed. Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented. The presented circuit adds minor complexity to conventional gate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhile consumes much lower power than conventional gate drivers.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

masters

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Department dc:contributor.department

Electrical and Computer Engineering

Grantor dc:publisher

Virginia Tech

Year dc:date.issued

2004

Author dc:creator

• Chen, Yuhui

Chair dc:contributor.committeechair

• Lee, Fred C.

Committee members dc:contributor.committeemember

• Borojević, Dušan
• van Wyk, Dann

• Resonant Power Conversion
• Power MOSFET
• Gate Drive

Statement dc:rights

• In Copyright

Licence dc:rights.uri

• http://rightsstatements.org/vocab/InC/1.0/

Dc Identifier Other

etd-06272000-14570054

OAI identifier oai:identifier

oai:vtechworks.lib.vt.edu:10919/10099