Tolimosios infraraudonosios srities optoelektronikos įtaisų žemo dažnio triukšmo charakteristikos /

III-V group semiconductor lasers, including GaAsBi (Gallium Arsenide Bismide) and AlGaAs (Aluminum Gallium Arsenide) lasers, are highly valued for their applications in telecommunications, medical technologies, and consumer electronics. AlGaAs lasers are known for their efficiency and stability in the near-infrared spectrum, while GaAsBi lasers, with bismuth incorporation, offer enhanced infrared light emission. This study aims to examine the material properties, operational efficiency, and low-frequency noise characteristics (1/𝑓 noise, generation-recombination noise, shot noise, and thermal noise) of AlGaAs and GaAsBi laser diodes. The goal is to contribute to the development of efficient, reliable, and versatile laser systems that are suitable for diverse applications. Measured at room temperature, the electrical noise of GaAsBi included generation-recombination noise, 1/𝑓 noise, and 1/𝑓𝛾 noise. Initially peak at low currents (~0,003 mA), then decreasing with higher currents. When measuring at lower temperatures the rise from 77 K to 293 K shifted noise from 1/𝑓 and 1/𝑓𝛾 to a Lorentzian spectrum, indicating active recombination centers. The measurements of AlGaAs revealed that the electrical noise was made up of generation-recombination noise at low currents, transitioning to 1/𝑓 and 1/𝑓𝛾 at higher currents. The intensity of these fluctuations decreased initially at (~0,1 mA), then increased near threshold current leading to rapid rise in electrical noise. Overall the intensity of electrical noise in the AlGaAs laser diode was larger than the ones registered in the GaAsBi laser. Optical noise fluctuations transitioned from thermal noise to 1/𝑓 and 1/𝑓𝛾 upon reaching threshold current. Strong positive correlation was registered between electrical and optical noise, notably around 60 mA currents.

Grantor dc:publisher

Institutional Repository of Vilnius University

Year dc:date

2024

Author dc:creator

• Gudeliauskas, Kipras,

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

lit

Repository record dc:identifier

https://repository.vu.lt/VU:ELABAETD210578823&prefLang=en_US

OAI identifier oai:identifier

oai:vu.lt:elaba:210578823