Grafeno ant skandžio oksido fotolitografija /

In this paper, I aimed to construct a microstructure on graphene using conventional microelectronic fabrication methods, such as laser photolithography and physical vapor deposition. This research was a part of a project carried out by NFTMC Vilnius University Photonics and Nanotechnology Institute (VUFNI). The research group to which I belong at the institute is the nitride technology group. In this institute, heteroepitaxy of group III nitrides on sapphire, silicon carbide, oxides of rare earth elements and homoepitaxy on bulk GaN substrates is carried out. The goal of the project is to obtain a metal-dielectric-semiconductor junction by replacing the metal with graphene due to its much better charge carrier transport properties than conventional metals. A graphene monolayer was set onto a 40nm thick scandium oxide (Sc2O3) layer using a wet transfer method, and the scandium oxide layer was deposited onto a p-type silicon wafer using molecular beam epitaxy. After the wet transfer, a photoresist mask was formed on the surface, following which the monolayer was dry etched inside an oxygen plasma chamber to form a graphene microstructure. Another photoresist mask was formed so that a nickel-gold metal layer could be deposited on the surface. After the lift-off of the unnecessary leftover metal layer, the complete microstructure could subsequently be used to perform Hall effect measurements to determine how the electrical properties of graphene deteriorate after the use of these laser photolithography processes.

Grantor dc:publisher

Institutional Repository of Vilnius University

Year dc:date

2024

Author dc:creator

• Kerevičius, Rėjus,

Statement dc:rights

• info:eu-repo/semantics/openAccess

Language dc:language

lit

Repository record dc:identifier

https://repository.vu.lt/VU:ELABAETD210577933&prefLang=en_US

OAI identifier oai:identifier

oai:vu.lt:elaba:210577933