{"id":{"repo_id":"vilnius","oai_identifier":"oai:vu.lt:elaba:1942463"},"canonical_url":"https://search.dev.ndltd.org/etd/vilnius/oai:vu.lt:elaba:1942463","repository":{"repo_id":"vilnius","name":"Vilnius University","base_url":"https://epublications.vu.lt/oai"},"display":{"title":"Modulated Reflectance and Photoluminescence Spectroscopy of Epitaxial InGaAs Quantum Dot Structures /","abstract":"Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling.","abstract_html":"Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling.","abstract_has_math":false,"creators":["Nedzinskas, Ramūnas,"],"institution":"Institutional Repository of Vilnius University","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2012,"date_issued":"2012","date_published":"2012","updated_at":"2026-07-24T05:55:35Z","subjects":["Quantum dots ; Quantum rods ; Optical properties ; Optical anisotropy ; Electronic structure"],"languages":["eng"],"rights":["info:eu-repo/semantics/openAccess"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://repository.vu.lt/VU:ELABAETD1942463&prefLang=en_US","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Nedzinskas, Ramūnas,"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2012"]},{"key":"dc:publisher","label":"Institution","values":["Institutional Repository of Vilnius University"]},{"key":"dc:relation","label":"Dc Relation","values":["https://epublications.vu.lt/object/elaba:1942463/1942463.pdf"]},{"key":"dc:type","label":"Dc Type","values":["info:eu-repo/semantics/doctoralThesis"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Quantum dots ; Quantum rods ; Optical properties ; Optical anisotropy ; Electronic structure"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["info:eu-repo/semantics/openAccess"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://repository.vu.lt/VU:ELABAETD1942463&prefLang=en_US"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Modulated Reflectance and Photoluminescence Spectroscopy of Epitaxial InGaAs Quantum Dot Structures /","Epitaksinių InGaAs kvantinių taškų darinių moduliuoto atspindžio ir fotoliuminescencijos spektroskopija."]}]}],"canonical_facts":{"dc:creator":["Nedzinskas, Ramūnas,"],"dc:date":["2012"],"dc:description":["Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling."],"dc:format":["application/pdf"],"dc:identifier":["https://repository.vu.lt/VU:ELABAETD1942463&prefLang=en_US"],"dc:language":["eng"],"dc:publisher":["Institutional Repository of Vilnius University"],"dc:relation":["https://epublications.vu.lt/object/elaba:1942463/1942463.pdf"],"dc:rights":["info:eu-repo/semantics/openAccess"],"dc:subject":["Quantum dots ; Quantum rods ; Optical properties ; Optical anisotropy ; Electronic structure"],"dc:title":["Modulated Reflectance and Photoluminescence Spectroscopy of Epitaxial InGaAs Quantum Dot Structures /","Epitaksinių InGaAs kvantinių taškų darinių moduliuoto atspindžio ir fotoliuminescencijos spektroskopija."],"dc:type":["info:eu-repo/semantics/doctoralThesis"]},"updated_at":"2026-07-24T05:55:35Z"}