Luminescence in ZnO

As a wide band semiconductor with a large binding energy (about 60meV), ZnO is a promising candidate semiconductor material for the next generation of optoelectronic , light emission or high power and high frequency devices. In order to make electrical device from ZnO, it is necessary to investigate optical properties of ZnO.In this thesis, PL setup and the properties of ZnO are introduced briefly and the optical properties of ZnO are investigated in detail. Temperature dependence of PL spectra of ZnO are measured and analyzed. Sharp emission line of PL spectra of rare earth (RE) doped ZnO are also investigated.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical Engineering

Year dc:date.available

2004

Author dc:creator

• Xu, Jin

Contributors dc:contributor

• Dr. Hadis Morkoc

• ZnO
• Luminescence
• Electrical and Computer Engineering
• Engineering

Statement dc:rights

• © The Author

Identifier

https://scholarscompass.vcu.edu/etd/785

OAI identifier oai:identifier

oai:scholarscompass.vcu.edu:etd-1784