Study and analysis of surface charge collection and emission spectrum of plasma ashing process

This research presents an important observation on the total surface charge collection using quantox wafers through the measurement of surface voltage (Vs) on wafer surface with contactless Kelvin Probe for changes in parameters during plasma ashing. In this report, it is covered on the plasma characteristics and performance using the optical emission spectroscopy (OES) measurement, the study on how processing condition change can impact the total surface charge collection and also the uniformity of the charges on the wafer surface, using the quantox measurement. In this study, 3 different types of ashers are tested with varying 5 processing parameters, which where the process time, pressure, gas flow, power and temperature. It is seen that changes in the condition of these parameters do impact on the total surface charge collection and also the uniformity of the charges on the wafer surface. Based on the processing conditions, it is observed that Inductively-Coupled Plasma (ICP) asher model is better in terms of total surface charge collection and uniformity compared to Barrel asher model, which has lower total charge collection but with higher non-uniformity due to the machine chamber configuration. On the other hand, Helical Resonator Plasma (HRP) asher model contributes to higher total surface charge collection with the lesser uniformity, which could potential contribute to plasma induced damage (PID).

Name dc:type.qualificationname

mphil

Level dc:type.qualificationlevel

masters

Grantor dc:publisher.institution

Universiti Tun Hussein Onn Malaysia

Year dc:date.issued

2019

Author dc:creator

• Sivapathy, Kanthaan

• QD450-801 Physical and theoretical chemistry

Language dc:language

en