{"id":{"repo_id":"utc","oai_identifier":"oai:scholar.utc.edu:theses-2207"},"canonical_url":"https://search.dev.ndltd.org/etd/utc/oai:scholar.utc.edu:theses-2207","repository":{"repo_id":"utc","name":"University of Tennessee - Chattanooga","base_url":"https://scholar.utc.edu/do/oai/"},"display":{"title":"Modeling reactive rarefied flows in Chemical Vapor Infiltration using Direct Simulation Monte Carlo","abstract":"Chemical Vapor Infiltration (CVI) is a key method for fabricating silicon carbide (SiC) matrix composites. Gas-phase precursors flow into a porous fiber, react, and deposit to form the ceramic matrix. Deposition quality and rate are strongly influenced by surface reactions, depending on temperature, gas flow, and reactor pressure. This study applies a computational model to better understand rarefied gas behavior and surface chemistry during CVI. We use the Direct Simulation Monte Carlo method to simulate gas flow and chemical reactions around the fibers. Simulations span Knudsen numbers 0.001–20 and temperatures 1000–1600 K (near‑continuum to free‑molecular). As rarefaction increases, deposition rate decreases, yet temperature remains significant. In forced‑flow CVI, deposition becomes uneven: the fiber's inlet side grows more, the opposite side less. To improve gas‑phase chemistry accuracy, we adapt a Quantum‑Kinetic model for methyltrichlorosilane and chlorine reactions. Overall, it clarifies how rarefied gas dynamics and activation energy control CVI.","abstract_html":"Chemical Vapor Infiltration (CVI) is a key method for fabricating silicon carbide (SiC) matrix composites. Gas-phase precursors flow into a porous fiber, react, and deposit to form the ceramic matrix. Deposition quality and rate are strongly influenced by surface reactions, depending on temperature, gas flow, and reactor pressure. This study applies a computational model to better understand rarefied gas behavior and surface chemistry during CVI. We use the Direct Simulation Monte Carlo method to simulate gas flow and chemical reactions around the fibers. Simulations span Knudsen numbers 0.001–20 and temperatures 1000–1600 K (near‑continuum to free‑molecular). As rarefaction increases, deposition rate decreases, yet temperature remains significant. In forced‑flow CVI, deposition becomes uneven: the fiber's inlet side grows more, the opposite side less. To improve gas‑phase chemistry accuracy, we adapt a Quantum‑Kinetic model for methyltrichlorosilane and chlorine reactions. Overall, it clarifies how rarefied gas dynamics and activation energy control CVI.","abstract_has_math":false,"creators":["EK, Ege C"],"institution":"University of Tennessee at Chattanooga","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Barisik, Murat","Sreenivas, Kidambi; Ranjan, Reetesh","College of Engineering and Computer Science"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":null,"date_issued":"","date_published":null,"updated_at":"2026-07-24T05:47:28Z","subjects":["Chemical vapor deposition","Monte Carlo method","Rarefied gas dynamics","Silicon carbide--Thermal properties","Surface chemistry--Mathematical models"],"languages":["English","eng"],"rights":[],"rights_urls":["http://rightsstatements.org/vocab/InC/1.0/"],"identifier_entries":[]},"links":{"outbound_url":"https://scholar.utc.edu/theses/1021","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Barisik, Murat","Sreenivas, Kidambi; Ranjan, Reetesh","College of Engineering and Computer Science"]},{"key":"dc:creator","label":"Author","values":["EK, Ege C"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2025-08-01T07:00:00Z"]},{"key":"dc:publisher","label":"Institution","values":["University of Tennessee at Chattanooga","Chattanooga (Tenn.)"]},{"key":"dc:relation","label":"Dc Relation","values":["Masters Theses and Doctoral Dissertations"]},{"key":"dc:type","label":"Dc Type","values":["Masters theses","Text"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Chemical vapor deposition","Monte Carlo method","Rarefied gas dynamics","Silicon carbide--Thermal properties","Surface chemistry--Mathematical models"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholar.utc.edu/theses/1021"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Dept. of Mechanical Engineering","M. S.; A thesis submitted to the faculty of the University of Tennessee at Chattanooga in partial fulfillment of the requirements of the degree of Master of Science."]},{"key":"dc:description.abstract","label":"Abstract","values":["Chemical Vapor Infiltration (CVI) is a key method for fabricating silicon carbide (SiC) matrix composites. Gas-phase precursors flow into a porous fiber, react, and deposit to form the ceramic matrix. Deposition quality and rate are strongly influenced by surface reactions, depending on temperature, gas flow, and reactor pressure. This study applies a computational model to better understand rarefied gas behavior and surface chemistry during CVI. We use the Direct Simulation Monte Carlo method to simulate gas flow and chemical reactions around the fibers. Simulations span Knudsen numbers 0.001–20 and temperatures 1000–1600 K (near‑continuum to free‑molecular). As rarefaction increases, deposition rate decreases, yet temperature remains significant. In forced‑flow CVI, deposition becomes uneven: the fiber's inlet side grows more, the opposite side less. To improve gas‑phase chemistry accuracy, we adapt a Quantum‑Kinetic model for methyltrichlorosilane and chlorine reactions. Overall, it clarifies how rarefied gas dynamics and activation energy control CVI."]},{"key":"dc:title","label":"Title","values":["Modeling reactive rarefied flows in Chemical Vapor Infiltration using Direct Simulation Monte Carlo"]}]}],"canonical_facts":{"dc:contributor":["Barisik, Murat","Sreenivas, Kidambi; Ranjan, Reetesh","College of Engineering and Computer Science"],"dc:creator":["EK, Ege C"],"dc:date":["2025-08-01T07:00:00Z"],"dc:description":["Dept. of Mechanical Engineering","M. S.; A thesis submitted to the faculty of the University of Tennessee at Chattanooga in partial fulfillment of the requirements of the degree of Master of Science."],"dc:description.abstract":["Chemical Vapor Infiltration (CVI) is a key method for fabricating silicon carbide (SiC) matrix composites. Gas-phase precursors flow into a porous fiber, react, and deposit to form the ceramic matrix. Deposition quality and rate are strongly influenced by surface reactions, depending on temperature, gas flow, and reactor pressure. This study applies a computational model to better understand rarefied gas behavior and surface chemistry during CVI. We use the Direct Simulation Monte Carlo method to simulate gas flow and chemical reactions around the fibers. Simulations span Knudsen numbers 0.001–20 and temperatures 1000–1600 K (near‑continuum to free‑molecular). As rarefaction increases, deposition rate decreases, yet temperature remains significant. In forced‑flow CVI, deposition becomes uneven: the fiber's inlet side grows more, the opposite side less. To improve gas‑phase chemistry accuracy, we adapt a Quantum‑Kinetic model for methyltrichlorosilane and chlorine reactions. Overall, it clarifies how rarefied gas dynamics and activation energy control CVI."],"dc:identifier":["https://scholar.utc.edu/theses/1021"],"dc:language":["English","eng"],"dc:publisher":["University of Tennessee at Chattanooga","Chattanooga (Tenn.)"],"dc:relation":["Masters Theses and Doctoral Dissertations"],"dc:rights":["http://rightsstatements.org/vocab/InC/1.0/"],"dc:subject":["Chemical vapor deposition","Monte Carlo method","Rarefied gas dynamics","Silicon carbide--Thermal properties","Surface chemistry--Mathematical models"],"dc:title":["Modeling reactive rarefied flows in Chemical Vapor Infiltration using Direct Simulation Monte Carlo"],"dc:type":["Masters theses","Text"]},"updated_at":"2026-07-24T05:47:28Z"}