{"id":{"repo_id":"utc","oai_identifier":"oai:scholar.utc.edu:theses-1777"},"canonical_url":"https://search.dev.ndltd.org/etd/utc/oai:scholar.utc.edu:theses-1777","repository":{"repo_id":"utc","name":"University of Tennessee - Chattanooga","base_url":"https://scholar.utc.edu/do/oai/"},"display":{"title":"An electro-optical simulation methodology for the analysis of single-event radiation effects in photonic devices","abstract":"Photonic integrated circuits (PICs) are devices that transmit and perform operations on optical signals. PICs offer significant benefits compared to conventional electronics, including increased data transmission rates. Despite the desire to leverage these benefits for space systems increasing in recent years, the study of radiation effects in PICs is still limited, especially the transient radiation effects known as single-event effects (SEEs). A roadblock in advancing the understanding of SEEs in PICs is the inability to co-simulate radiation effects in both the optical and electrical domains. Establishing a means of simulating SEEs in PICs would aide in: (1) modeling SEEs in various devices, (2) determining specific mechanisms by which SEEs upset devices, and (3) discovering methods for improving the radiation hardness of PICs. This work introduces a methodology for the simulation of SEEs in PICs that couples optical and electrical domain simulations that are required to fully characterize SEEs in PICs.","abstract_html":"Photonic integrated circuits (PICs) are devices that transmit and perform operations on optical signals. PICs offer significant benefits compared to conventional electronics, including increased data transmission rates. Despite the desire to leverage these benefits for space systems increasing in recent years, the study of radiation effects in PICs is still limited, especially the transient radiation effects known as single-event effects (SEEs). A roadblock in advancing the understanding of SEEs in PICs is the inability to co-simulate radiation effects in both the optical and electrical domains. Establishing a means of simulating SEEs in PICs would aide in: (1) modeling SEEs in various devices, (2) determining specific mechanisms by which SEEs upset devices, and (3) discovering methods for improving the radiation hardness of PICs. This work introduces a methodology for the simulation of SEEs in PICs that couples optical and electrical domain simulations that are required to fully characterize SEEs in PICs.","abstract_has_math":false,"creators":["Boggs, Ryan"],"institution":"University of Tennessee at Chattanooga","degree_name":null,"degree_level":null,"degree_discipline":null,"degree_department":null,"school":null,"contributors":["Loveless, T. Daniel","Reising, Donald R.; Sreenivas, Kidambi","College of Engineering and Computer Science"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":null,"date_issued":"","date_published":null,"updated_at":"2026-07-24T05:46:59Z","subjects":["Integrated optics","Integrated circuits","Photonics"],"languages":["English","eng"],"rights":[],"rights_urls":["https://rightsstatements.org/page/InC/1.0/?language=en"],"identifier_entries":[]},"links":{"outbound_url":"https://scholar.utc.edu/theses/619","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Loveless, T. 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S.; A thesis submitted to the faculty of the University of Tennessee at Chattanooga in partial fulfillment of the requirements of the degree of Master of Science."]},{"key":"dc:description.abstract","label":"Abstract","values":["Photonic integrated circuits (PICs) are devices that transmit and perform operations on optical signals. PICs offer significant benefits compared to conventional electronics, including increased data transmission rates. Despite the desire to leverage these benefits for space systems increasing in recent years, the study of radiation effects in PICs is still limited, especially the transient radiation effects known as single-event effects (SEEs). A roadblock in advancing the understanding of SEEs in PICs is the inability to co-simulate radiation effects in both the optical and electrical domains. Establishing a means of simulating SEEs in PICs would aide in: (1) modeling SEEs in various devices, (2) determining specific mechanisms by which SEEs upset devices, and (3) discovering methods for improving the radiation hardness of PICs. This work introduces a methodology for the simulation of SEEs in PICs that couples optical and electrical domain simulations that are required to fully characterize SEEs in PICs."]},{"key":"dc:title","label":"Title","values":["An electro-optical simulation methodology for the analysis of single-event radiation effects in photonic devices"]}]}],"canonical_facts":{"dc:contributor":["Loveless, T. Daniel","Reising, Donald R.; Sreenivas, Kidambi","College of Engineering and Computer Science"],"dc:creator":["Boggs, Ryan"],"dc:date":["2019-08-01T07:00:00Z"],"dc:description":["Dept. of Electrical Engineering","M. S.; A thesis submitted to the faculty of the University of Tennessee at Chattanooga in partial fulfillment of the requirements of the degree of Master of Science."],"dc:description.abstract":["Photonic integrated circuits (PICs) are devices that transmit and perform operations on optical signals. PICs offer significant benefits compared to conventional electronics, including increased data transmission rates. Despite the desire to leverage these benefits for space systems increasing in recent years, the study of radiation effects in PICs is still limited, especially the transient radiation effects known as single-event effects (SEEs). A roadblock in advancing the understanding of SEEs in PICs is the inability to co-simulate radiation effects in both the optical and electrical domains. Establishing a means of simulating SEEs in PICs would aide in: (1) modeling SEEs in various devices, (2) determining specific mechanisms by which SEEs upset devices, and (3) discovering methods for improving the radiation hardness of PICs. This work introduces a methodology for the simulation of SEEs in PICs that couples optical and electrical domain simulations that are required to fully characterize SEEs in PICs."],"dc:identifier":["https://scholar.utc.edu/theses/619"],"dc:language":["English","eng"],"dc:publisher":["University of Tennessee at Chattanooga","Chattanooga (Tenn.)"],"dc:relation":["Masters Theses and Doctoral Dissertations"],"dc:rights":["https://rightsstatements.org/page/InC/1.0/?language=en"],"dc:subject":["Integrated optics","Integrated circuits","Photonics"],"dc:title":["An electro-optical simulation methodology for the analysis of single-event radiation effects in photonic devices"],"dc:type":["Masters theses","Text"]},"updated_at":"2026-07-24T05:46:59Z"}