{"id":{"repo_id":"uoit","oai_identifier":"oai:ontariotechu.scholaris.ca:10155/1928"},"canonical_url":"https://search.dev.ndltd.org/etd/uoit/oai:ontariotechu.scholaris.ca:10155/1928","repository":{"repo_id":"uoit","name":"Ontario Institute of Technology","base_url":"https://ontariotechu.scholaris.ca/server/oai/request"},"display":{"title":"Advancements in resonant and current source gate driving techniques for fast switching Wide Band Gap (WBG) Metal Oxide Field Effect Transistors (MOSFETs)","abstract":"Traditional methods for driving the Metal Oxide Field Effect Transistor, like the Voltage Source Gate Driver (VSGD), prove to be inefficient for high-frequency operation, especially in applications where Wide-Bandgap devices are used. This is because of their losses and poor control over the switching transitions. This thesis investigates various alternatives, specifically the Multi-Resonant Gate Driver (MRGD) and the Current Source Gate Driver (CSGD). A sweep-based optimization method is presented to increase the MRGD design accuracy and frequency response. Hardware prototypes of the MRGD demonstrate 34% efficiency improvement over VSGD. Furthermore, a new dual-channel Isolated CSGD is proposed, which provides two galvanically isolated gate-drive signals with switching time control. Comparative analysis demonstrates 20% efficiency improvement over VSGD. The design is validated using a hardware-in-the-loop (HIL) real-time simulator and the gate switch controller is successfully embedded on a DSP by Texas Instruments, with results that closely matched across simulation and HIL platforms.","abstract_html":"Traditional methods for driving the Metal Oxide Field Effect Transistor, like the Voltage Source Gate Driver (VSGD), prove to be inefficient for high-frequency operation, especially in applications where Wide-Bandgap devices are used. This is because of their losses and poor control over the switching transitions. This thesis investigates various alternatives, specifically the Multi-Resonant Gate Driver (MRGD) and the Current Source Gate Driver (CSGD). A sweep-based optimization method is presented to increase the MRGD design accuracy and frequency response. Hardware prototypes of the MRGD demonstrate 34% efficiency improvement over VSGD. Furthermore, a new dual-channel Isolated CSGD is proposed, which provides two galvanically isolated gate-drive signals with switching time control. Comparative analysis demonstrates 20% efficiency improvement over VSGD. The design is validated using a hardware-in-the-loop (HIL) real-time simulator and the gate switch controller is successfully embedded on a DSP by Texas Instruments, with results that closely matched across simulation and HIL platforms.","abstract_has_math":false,"creators":["Elahi, Asjad"],"institution":"University of Ontario Institute of Technology","degree_name":"Master of Applied Science (MASc)","degree_level":null,"degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":[],"advisors":["Youssef, Mohamed"],"committee_chairs":[],"committee_members":[],"year":2025,"date_issued":"2025-04-01","date_published":"2025-04-01","updated_at":"2026-07-24T05:35:28Z","subjects":[],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/10155/1928","outbound_label":"Handle","outbound_source":"dc:identifier.uri"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor.advisor","label":"Advisor","values":["Youssef, Mohamed"]},{"key":"dc:creator","label":"Author","values":["Elahi, Asjad"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.accessioned","label":"Dc Date Accessioned","values":["2025-04-29T16:58:51Z"]},{"key":"dc:date.available","label":"Dc Date Available","values":["2025-04-29T16:58:51Z"]},{"key":"dc:date.issued","label":"Date","values":["2025-04-01"]},{"key":"dc:type","label":"Dc Type","values":["Thesis"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Applied Science (MASc)"]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Ontario Institute of Technology"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language.iso","label":"Language (ISO)","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier.uri","label":"Identifier URI","values":["https://hdl.handle.net/10155/1928"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Traditional methods for driving the Metal Oxide Field Effect Transistor, like the Voltage Source Gate Driver (VSGD), prove to be inefficient for high-frequency operation, especially in applications where Wide-Bandgap devices are used. This is because of their losses and poor control over the switching transitions. This thesis investigates various alternatives, specifically the Multi-Resonant Gate Driver (MRGD) and the Current Source Gate Driver (CSGD). A sweep-based optimization method is presented to increase the MRGD design accuracy and frequency response. Hardware prototypes of the MRGD demonstrate 34% efficiency improvement over VSGD. Furthermore, a new dual-channel Isolated CSGD is proposed, which provides two galvanically isolated gate-drive signals with switching time control. Comparative analysis demonstrates 20% efficiency improvement over VSGD. The design is validated using a hardware-in-the-loop (HIL) real-time simulator and the gate switch controller is successfully embedded on a DSP by Texas Instruments, with results that closely matched across simulation and HIL platforms."]},{"key":"dc:title","label":"Title","values":["Advancements in resonant and current source gate driving techniques for fast switching Wide Band Gap (WBG) Metal Oxide Field Effect Transistors (MOSFETs)"]}]}],"canonical_facts":{"dc:contributor.advisor":["Youssef, Mohamed"],"dc:creator":["Elahi, Asjad"],"dc:date.accessioned":["2025-04-29T16:58:51Z"],"dc:date.available":["2025-04-29T16:58:51Z"],"dc:date.issued":["2025-04-01"],"dc:description.abstract":["Traditional methods for driving the Metal Oxide Field Effect Transistor, like the Voltage Source Gate Driver (VSGD), prove to be inefficient for high-frequency operation, especially in applications where Wide-Bandgap devices are used. This is because of their losses and poor control over the switching transitions. This thesis investigates various alternatives, specifically the Multi-Resonant Gate Driver (MRGD) and the Current Source Gate Driver (CSGD). A sweep-based optimization method is presented to increase the MRGD design accuracy and frequency response. Hardware prototypes of the MRGD demonstrate 34% efficiency improvement over VSGD. Furthermore, a new dual-channel Isolated CSGD is proposed, which provides two galvanically isolated gate-drive signals with switching time control. Comparative analysis demonstrates 20% efficiency improvement over VSGD. The design is validated using a hardware-in-the-loop (HIL) real-time simulator and the gate switch controller is successfully embedded on a DSP by Texas Instruments, with results that closely matched across simulation and HIL platforms."],"dc:identifier.uri":["https://hdl.handle.net/10155/1928"],"dc:language.iso":["en"],"dc:title":["Advancements in resonant and current source gate driving techniques for fast switching Wide Band Gap (WBG) Metal Oxide Field Effect Transistors (MOSFETs)"],"dc:type":["Thesis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_name":["Master of Applied Science (MASc)"],"thesis:institution_name":["University of Ontario Institute of Technology"]},"updated_at":"2026-07-24T05:35:28Z"}