Electronic and optical characterisations of silicon quantum dots and its applications in solar cells
type: CreativeWork
description: In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order t…
abstract: In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order t…
author: Fangsuwannarak, Thipwan
language: EN
keywords: Third generation., Solar cells -- Design and construction., Solar cells -- Materials., Silicon solar cells -- Design and construction., Silicon solar cells -- Materials., Quantum dots., Silicon dioxide matrix., Photovoltaic power generation., Photovoltaic power systems., Semiconductor nanocrystals.
license: https://purl.org/coar/access_right/c_abf2
license: https://creativecommons.org/licenses/by-nc-nd/3.0/au/
date published: 2007
date modified: 2026-07-24T05:34:32Z
provider: University of New South Wales
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: UNSW, Sydney

PropertyValue
property ID: Handle
value: http://hdl.handle.net/1959.4/44340

PropertyValue
property ID: DOI
value: 10.26190/unsworks/17561