{"id":{"repo_id":"uno","oai_identifier":"oai:scholarworks.uno.edu:td-2060"},"canonical_url":"https://search.dev.ndltd.org/etd/uno/oai:scholarworks.uno.edu:td-2060","repository":{"repo_id":"uno","name":"University of New Orleans","base_url":"https://scholarworks.uno.edu/do/oai/"},"display":{"title":"Embedded Multilayer Thin Film Stacks as Polarizing Beam Splitters and Wave Retarders Operating under Condition of Frustrated Total Internal Reflection","abstract":"The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and high-index – low-index bilayers repeated on both sides of the central trilayer maintaining the symmetry of the entire stack. The periodic multilayer consists of periodically repeated low-index – high-index bilayers. Each multilayer stack is embedded in a high-index prism. Embedded centro-symmetric multilayer stacks are designed to function as efficient polarizers or polarizing beam splitters (PBSs) under conditions of FTIR over an extended range of incidence angles. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15 and 19 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë = 10.6 ìm, are presented. Embedded centro-symmetric multilayer stacks are also designed to function as complete-transmission quarter-wave or half-wave retardation (QWR or HWR) devices under conditions of FTIR. QWR and HWR designs at ë =1.55 mì are presented that employ 11 and 7 layers of Si and SiO2 thin films embedded in GaP and Si cube prisms, respectively. The angular and spectral sensitivities of these devices are also considered. Embedded centro-symmetric multilayer stacks under FTIR conditions are also designed to produce various 50%-50% beam splitters. Embedded periodic multilayer stacks are designed to function as polarizers and PBSs at discrete multiple angles of incidence and wavelengths under condition of FTIR. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 4, 6, 8, 10, 12, 14, 16 and 18 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë= 10.6 ìm, are presented.","abstract_html":"The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and high-index – low-index bilayers repeated on both sides of the central trilayer maintaining the symmetry of the entire stack. The periodic multilayer consists of periodically repeated low-index – high-index bilayers. Each multilayer stack is embedded in a high-index prism. Embedded centro-symmetric multilayer stacks are designed to function as efficient polarizers or polarizing beam splitters (PBSs) under conditions of FTIR over an extended range of incidence angles. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15 and 19 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë = 10.6 ìm, are presented. Embedded centro-symmetric multilayer stacks are also designed to function as complete-transmission quarter-wave or half-wave retardation (QWR or HWR) devices under conditions of FTIR. QWR and HWR designs at ë =1.55 mì are presented that employ 11 and 7 layers of Si and SiO2 thin films embedded in GaP and Si cube prisms, respectively. The angular and spectral sensitivities of these devices are also considered. Embedded centro-symmetric multilayer stacks under FTIR conditions are also designed to produce various 50%-50% beam splitters. Embedded periodic multilayer stacks are designed to function as polarizers and PBSs at discrete multiple angles of incidence and wavelengths under condition of FTIR. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 4, 6, 8, 10, 12, 14, 16 and 18 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë= 10.6 ìm, are presented.","abstract_has_math":false,"creators":["Reddy, Perla Siva"],"institution":null,"degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Azzam, Rasheed","Alsamman, Abdul","Charalampidis, Dimitrios"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2007,"date_issued":"2007-05-18T07:00:00Z","date_published":"2007-05-18T07:00:00Z","updated_at":"2026-07-24T05:29:02Z","subjects":[],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://scholarworks.uno.edu/td/1079","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Azzam, Rasheed","Alsamman, Abdul","Charalampidis, Dimitrios"]},{"key":"dc:creator","label":"Author","values":["Reddy, Perla Siva"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarworks.uno.edu/td/1079"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and high-index – low-index bilayers repeated on both sides of the central trilayer maintaining the symmetry of the entire stack. The periodic multilayer consists of periodically repeated low-index – high-index bilayers. Each multilayer stack is embedded in a high-index prism. Embedded centro-symmetric multilayer stacks are designed to function as efficient polarizers or polarizing beam splitters (PBSs) under conditions of FTIR over an extended range of incidence angles. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15 and 19 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë = 10.6 ìm, are presented. Embedded centro-symmetric multilayer stacks are also designed to function as complete-transmission quarter-wave or half-wave retardation (QWR or HWR) devices under conditions of FTIR. QWR and HWR designs at ë =1.55 mì are presented that employ 11 and 7 layers of Si and SiO2 thin films embedded in GaP and Si cube prisms, respectively. The angular and spectral sensitivities of these devices are also considered. Embedded centro-symmetric multilayer stacks under FTIR conditions are also designed to produce various 50%-50% beam splitters. Embedded periodic multilayer stacks are designed to function as polarizers and PBSs at discrete multiple angles of incidence and wavelengths under condition of FTIR. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 4, 6, 8, 10, 12, 14, 16 and 18 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë= 10.6 ìm, are presented."]},{"key":"dc:title","label":"Title","values":["Embedded Multilayer Thin Film Stacks as Polarizing Beam Splitters and Wave Retarders Operating under Condition of Frustrated Total Internal Reflection"]}]}],"canonical_facts":{"dc:contributor":["Azzam, Rasheed","Alsamman, Abdul","Charalampidis, Dimitrios"],"dc:creator":["Reddy, Perla Siva"],"dc:description.abstract":["The polarization properties of embedded centro-symmetric and periodic multilayer stacks under conditions of frustrated total internal reflection (FTIR) are considered. The centro-symmetric multilayer stack consists of a high-index center layer sandwiched between two identical low-index films and high-index – low-index bilayers repeated on both sides of the central trilayer maintaining the symmetry of the entire stack. The periodic multilayer consists of periodically repeated low-index – high-index bilayers. Each multilayer stack is embedded in a high-index prism. Embedded centro-symmetric multilayer stacks are designed to function as efficient polarizers or polarizing beam splitters (PBSs) under conditions of FTIR over an extended range of incidence angles. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15 and 19 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë = 10.6 ìm, are presented. Embedded centro-symmetric multilayer stacks are also designed to function as complete-transmission quarter-wave or half-wave retardation (QWR or HWR) devices under conditions of FTIR. QWR and HWR designs at ë =1.55 mì are presented that employ 11 and 7 layers of Si and SiO2 thin films embedded in GaP and Si cube prisms, respectively. The angular and spectral sensitivities of these devices are also considered. Embedded centro-symmetric multilayer stacks under FTIR conditions are also designed to produce various 50%-50% beam splitters. Embedded periodic multilayer stacks are designed to function as polarizers and PBSs at discrete multiple angles of incidence and wavelengths under condition of FTIR. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 4, 6, 8, 10, 12, 14, 16 and 18 layers of BaF2 and PbTe thin films embedded in a ZnS prism, operating at ë= 10.6 ìm, are presented."],"dc:identifier":["https://scholarworks.uno.edu/td/1079"],"dc:title":["Embedded Multilayer Thin Film Stacks as Polarizing Beam Splitters and Wave Retarders Operating under Condition of Frustrated Total Internal Reflection"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."]},"updated_at":"2026-07-24T05:29:02Z"}