{"id":{"repo_id":"unm","oai_identifier":"oai:digitalrepository.unm.edu:ose_etds-1025"},"canonical_url":"https://search.dev.ndltd.org/etd/unm/oai:digitalrepository.unm.edu:ose_etds-1025","repository":{"repo_id":"unm","name":"University of New Mexico","base_url":"https://digitalrepository.unm.edu/do/oai/"},"display":{"title":"LOW-TEMPERATURE CHARACTERIZATION OF A 1.55-μm MULTIPLE-QUANTUM-WELL LASER DOWN TO 10 K","abstract":"A ridge-waveguide 1.55-&#956;m semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, differential efficiency, emission wavelength, and series resistance, extracted from conventional L-I/I-V and spectral measurements, is presented and analyzed. The results indicate that a diode laser designed for room-temperature operation can perform surprisingly well at cryogenic temperatures.","abstract_html":"A ridge-waveguide 1.55-&amp;#956;m semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, differential efficiency, emission wavelength, and series resistance, extracted from conventional L-I/I-V and spectral measurements, is presented and analyzed. The results indicate that a diode laser designed for room-temperature operation can perform surprisingly well at cryogenic temperatures.","abstract_has_math":false,"creators":["Mercado, Emmanuel"],"institution":null,"degree_name":"Optical Science and Engineering","degree_level":"Masters","degree_discipline":"Optical Science and Engineering","degree_department":null,"school":null,"contributors":["Osinski, Marek","Balakrishnan, Ganesh","Feezell, Daniel"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2013,"date_issued":"2013-07-11T07:00:00Z","date_published":"2013-07-11T07:00:00Z","updated_at":"2026-07-24T05:26:35Z","subjects":[],"languages":["English"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalrepository.unm.edu/ose_etds/26"],"render_values":[{"text":"https://digitalrepository.unm.edu/ose_etds/26","href":"https://digitalrepository.unm.edu/ose_etds/26","code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/1928/23201","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Osinski, Marek","Balakrishnan, Ganesh","Feezell, Daniel"]},{"key":"dc:creator","label":"Author","values":["Mercado, Emmanuel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Optical Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Masters","Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Optical Science and Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/1928/23201","https://digitalrepository.unm.edu/ose_etds/26"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A ridge-waveguide 1.55-&#956;m semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, differential efficiency, emission wavelength, and series resistance, extracted from conventional L-I/I-V and spectral measurements, is presented and analyzed. The results indicate that a diode laser designed for room-temperature operation can perform surprisingly well at cryogenic temperatures."]},{"key":"dc:title","label":"Title","values":["LOW-TEMPERATURE CHARACTERIZATION OF A 1.55-μm MULTIPLE-QUANTUM-WELL LASER DOWN TO 10 K"]}]}],"canonical_facts":{"dc:contributor":["Osinski, Marek","Balakrishnan, Ganesh","Feezell, Daniel"],"dc:creator":["Mercado, Emmanuel"],"dc:description.abstract":["A ridge-waveguide 1.55-&#956;m semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, differential efficiency, emission wavelength, and series resistance, extracted from conventional L-I/I-V and spectral measurements, is presented and analyzed. The results indicate that a diode laser designed for room-temperature operation can perform surprisingly well at cryogenic temperatures."],"dc:identifier":["http://hdl.handle.net/1928/23201","https://digitalrepository.unm.edu/ose_etds/26"],"dc:language":["English"],"dc:title":["LOW-TEMPERATURE CHARACTERIZATION OF A 1.55-μm MULTIPLE-QUANTUM-WELL LASER DOWN TO 10 K"],"thesis:degree_discipline":["Optical Science and Engineering"],"thesis:degree_level":["Masters","Thesis"],"thesis:degree_name":["Optical Science and Engineering"]},"updated_at":"2026-07-24T05:26:35Z"}