{"id":{"repo_id":"unm","oai_identifier":"oai:digitalrepository.unm.edu:ose_etds-1003"},"canonical_url":"https://search.dev.ndltd.org/etd/unm/oai:digitalrepository.unm.edu:ose_etds-1003","repository":{"repo_id":"unm","name":"University of New Mexico","base_url":"https://digitalrepository.unm.edu/do/oai/"},"display":{"title":"Simulation of strongly injection-locked semiconductor ring lasers","abstract":"To overcome the limited modulation bandwidth of directly modulated semiconductors, a novel scheme for modulation bandwidth enhancement and tailoring is presented. This scheme involves a single-frequency master laser monolithically integrated with strongly injection-locked whistle-geometry semiconductor ring lasers. Improved high-speed performance of the novel scheme is confirmed through numerical modeling, showing greatly enhanced resonance frequency of up to ~160 GHz. Approaches to further improve the modulation response of strongly injection-locked ring lasers, including cascaded injection-locking and Q-modulated injection-locking are also presented.","abstract_html":"To overcome the limited modulation bandwidth of directly modulated semiconductors, a novel scheme for modulation bandwidth enhancement and tailoring is presented. This scheme involves a single-frequency master laser monolithically integrated with strongly injection-locked whistle-geometry semiconductor ring lasers. Improved high-speed performance of the novel scheme is confirmed through numerical modeling, showing greatly enhanced resonance frequency of up to ~160 GHz. Approaches to further improve the modulation response of strongly injection-locked ring lasers, including cascaded injection-locking and Q-modulated injection-locking are also presented.","abstract_has_math":false,"creators":["Chu, Fei-Hung"],"institution":null,"degree_name":"Optical Science and Engineering","degree_level":"Doctoral","degree_discipline":"Optical Science and Engineering","degree_department":null,"school":null,"contributors":["Osi\\u0144ski, Marek","Balakrishnan, Ganesh","Smolyakov, Gennady","Naderi, Nader"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-02-02T08:00:00Z","date_published":"2016-02-02T08:00:00Z","updated_at":"2026-07-24T05:26:35Z","subjects":[],"languages":["English"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalrepository.unm.edu/ose_etds/4"],"render_values":[{"text":"https://digitalrepository.unm.edu/ose_etds/4","href":"https://digitalrepository.unm.edu/ose_etds/4","code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/1928/31756","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Osi\\u0144ski, Marek","Balakrishnan, Ganesh","Smolyakov, Gennady","Naderi, Nader"]},{"key":"dc:creator","label":"Author","values":["Chu, Fei-Hung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Optical Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Doctoral","Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Optical Science and Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/1928/31756","https://digitalrepository.unm.edu/ose_etds/4"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["To overcome the limited modulation bandwidth of directly modulated semiconductors, a novel scheme for modulation bandwidth enhancement and tailoring is presented. This scheme involves a single-frequency master laser monolithically integrated with strongly injection-locked whistle-geometry semiconductor ring lasers. Improved high-speed performance of the novel scheme is confirmed through numerical modeling, showing greatly enhanced resonance frequency of up to ~160 GHz. Approaches to further improve the modulation response of strongly injection-locked ring lasers, including cascaded injection-locking and Q-modulated injection-locking are also presented."]},{"key":"dc:title","label":"Title","values":["Simulation of strongly injection-locked semiconductor ring lasers"]}]}],"canonical_facts":{"dc:contributor":["Osi\\u0144ski, Marek","Balakrishnan, Ganesh","Smolyakov, Gennady","Naderi, Nader"],"dc:creator":["Chu, Fei-Hung"],"dc:description.abstract":["To overcome the limited modulation bandwidth of directly modulated semiconductors, a novel scheme for modulation bandwidth enhancement and tailoring is presented. 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