TIME DOMAIN CHARACTERIZATION OF MONOLITHIC QUANTUM DOT PASSIVELY MODE-LOCKED LASERS
type: CreativeWork
description: Passively mode-locked lasers based on InAs/GaAs quantum dots have benefited from the unique properties pertaining to this material system, leading to the demonstration of wide mode-locking operational maps, and reconfigurable repetition rates, as well as low rms timing jitter. Applications of these passively mode-locked lasers include optical clock distribution, the generation of RF signals and high bit rate optical time division multiplexing. In addition to their utility for terrestrial applications, quantum dot mode-locked lasers have the strong potential to support applications in intra-satellite data transmission. Owing to their compact size and low power consumption properties, coupled with the potential to achieve enormous aggregate bandwidth from a single transmitter, desirable size, weight and power (SWaP) metrics can be achieved while simultaneously increasing the capacity. Supporting applications in space data transmission architectures requires a strong understanding of the evolution of the device characteristics over a broad range of operating conditions. The temperature-dependent operation of a passively mode-locked laser typically relies on the mutual interdependence of the saturable absorber and amplifying gain section in a two-section device, and therefore it is not readily apparent how these devices will perform over broad temperature excursions. In this dissertation, a detailed study is presented on a series of quantum dot passively mode-locked lasers with variable absorber to gain-section length ratios. Inputs into an analytical model used for predicting regions of mode-locking stability for a given cavity geometry, are derived from measurements of modal gain and absorption on a multi-section single pass emitter. The effects of temperature on the operational range of pulses emitted from the quantum dot ground and excited states are experimentally examined on a set of two-section mode-locked lasers having variable absorber lengths. A comparison is …
abstract: Passively mode-locked lasers based on InAs/GaAs quantum dots have benefited from the unique properties pertaining to this material system, leading to the demonstration of wide mode-locking operational maps, and reconfigurable repetition rates, as well as low rms timing jitter. Applications of these passively mode-locked lasers include optical clock distribution, the generation of RF signals and high bit rate optical time division multiplexing. In addition to their utility for terrestrial applications, quantum dot mode-locked lasers have the strong potential to support applications in intra-satellite data transmission. Owing to their compact size and low power consumption properties, coupled with the potential to achieve enormous aggregate bandwidth from a single transmitter, desirable size, weight and power (SWaP) metrics can be achieved while simultaneously increasing the capacity. Supporting applications in space data transmission architectures requires a strong understanding of the evolution of the device characteristics over a broad range of operating conditions. The temperature-dependent operation of a passively mode-locked laser typically relies on the mutual interdependence of the saturable absorber and amplifying gain section in a two-section device, and therefore it is not readily apparent how these devices will perform over broad temperature excursions. In this dissertation, a detailed study is presented on a series of quantum dot passively mode-locked lasers with variable absorber to gain-section length ratios. Inputs into an analytical model used for predicting regions of mode-locking stability for a given cavity geometry, are derived from measurements of modal gain and absorption on a multi-section single pass emitter. The effects of temperature on the operational range of pulses emitted from the quantum dot ground and excited states are experimentally examined on a set of two-section mode-locked lasers having variable absorber lengths. A comparison is …
author: Mee, Jesse
language: English
keywords: Semiconductor Laser, Mode-Locked Laser, Quantum Dot
date published: 2013-09-05T07:00:00Z
date modified: 2026-07-24T05:27:25Z
provider: University of New Mexico
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of New Mexico