{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-2509"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-2509","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy","abstract":"A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data.","abstract_html":"A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data.","abstract_has_math":false,"creators":["Stanley, Irena Vidhya Mabel"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Engineering (ME)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Rama Venkat"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2003,"date_issued":"2003-01-01T08:00:00Z","date_published":"2003-01-01T08:00:00Z","updated_at":"2026-07-24T05:25:40Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/1510"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/1510","href":"https://oasis.library.unlv.edu/rtds/1510","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/nkee-29pm","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rama Venkat"]},{"key":"dc:creator","label":"Author","values":["Stanley, Irena Vidhya Mabel"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Engineering (ME)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25669/nkee-29pm","https://oasis.library.unlv.edu/rtds/1510","https://oasis.library.unlv.edu/context/rtds/article/2509/viewcontent/uc.pdf"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Rama Venkat"],"dc:creator":["Stanley, Irena Vidhya Mabel"],"dc:description.abstract":["A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data."],"dc:format":["pdf"],"dc:identifier":["10.25669/nkee-29pm","https://oasis.library.unlv.edu/rtds/1510","https://oasis.library.unlv.edu/context/rtds/article/2509/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy"],"dc:type":["Text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Engineering (ME)"]},"updated_at":"2026-07-24T05:25:40Z"}