{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-2286"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-2286","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper","abstract":"In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.).","abstract_html":"In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.).","abstract_has_math":false,"creators":["Irudayam, Amudha Regina"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Rama Venkat"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2001,"date_issued":"2001-01-01T08:00:00Z","date_published":"2001-01-01T08:00:00Z","updated_at":"2026-07-24T05:25:18Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/1287"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/1287","href":"https://oasis.library.unlv.edu/rtds/1287","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/0sft-8ii6","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rama Venkat"]},{"key":"dc:creator","label":"Author","values":["Irudayam, Amudha Regina"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (MS)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25669/0sft-8ii6","https://oasis.library.unlv.edu/rtds/1287","https://oasis.library.unlv.edu/context/rtds/article/2286/viewcontent/uc.pdf"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.)."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper"]}]}],"canonical_facts":{"dc:contributor":["Rama Venkat"],"dc:creator":["Irudayam, Amudha Regina"],"dc:description.abstract":["In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.)."],"dc:format":["pdf"],"dc:identifier":["10.25669/0sft-8ii6","https://oasis.library.unlv.edu/rtds/1287","https://oasis.library.unlv.edu/context/rtds/article/2286/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper"],"dc:type":["Text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:25:18Z"}