{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-1933"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-1933","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study","abstract":"Surface dynamics dominate the incorporation of charged and neutral antisite arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and concentration of antisites and the RHEED oscillations (ROs) behavior. The dependence of antisite concentrations on growth parameters can be explained based on the saturation of the PA layer coverage at a monolayer and the competing rate processes such as the incorporation into and evaporation of antisite arsenic from the crystalline surface. The RHEED intensity is computed based on kinematical theory of electron diffraction with different interplanar distances for the PA layer (2.48A) and the crystal (1.41A). At temperatures and beam equivalent pressures (BEP)s when the surface coverage is 0.5, the resulting RHEED reflection contributions from both surfaces covered by the PA layer and the crystal interfere destructively to result in no ROs.","abstract_html":"Surface dynamics dominate the incorporation of charged and neutral antisite arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and concentration of antisites and the RHEED oscillations (ROs) behavior. The dependence of antisite concentrations on growth parameters can be explained based on the saturation of the PA layer coverage at a monolayer and the competing rate processes such as the incorporation into and evaporation of antisite arsenic from the crystalline surface. The RHEED intensity is computed based on kinematical theory of electron diffraction with different interplanar distances for the PA layer (2.48A) and the crystal (1.41A). At temperatures and beam equivalent pressures (BEP)s when the surface coverage is 0.5, the resulting RHEED reflection contributions from both surfaces covered by the PA layer and the crystal interfere destructively to result in no ROs.","abstract_has_math":false,"creators":["Krishnan, Natarajan"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Rama Venkat"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1998,"date_issued":"1998-01-01T08:00:00Z","date_published":"1998-01-01T08:00:00Z","updated_at":"2026-07-24T05:24:53Z","subjects":[],"languages":[],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/934"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/934","href":"https://oasis.library.unlv.edu/rtds/934","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/uu20-4068","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rama Venkat"]},{"key":"dc:creator","label":"Author","values":["Krishnan, Natarajan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (MS)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25669/uu20-4068","https://oasis.library.unlv.edu/rtds/934","https://oasis.library.unlv.edu/context/rtds/article/1933/viewcontent/uc.pdf"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Surface dynamics dominate the incorporation of charged and neutral antisite arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and concentration of antisites and the RHEED oscillations (ROs) behavior. The dependence of antisite concentrations on growth parameters can be explained based on the saturation of the PA layer coverage at a monolayer and the competing rate processes such as the incorporation into and evaporation of antisite arsenic from the crystalline surface. The RHEED intensity is computed based on kinematical theory of electron diffraction with different interplanar distances for the PA layer (2.48A) and the crystal (1.41A). At temperatures and beam equivalent pressures (BEP)s when the surface coverage is 0.5, the resulting RHEED reflection contributions from both surfaces covered by the PA layer and the crystal interfere destructively to result in no ROs."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study"]}]}],"canonical_facts":{"dc:contributor":["Rama Venkat"],"dc:creator":["Krishnan, Natarajan"],"dc:description.abstract":["Surface dynamics dominate the incorporation of charged and neutral antisite arsenic and the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature (LT) molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A comprehensive rate equation model is proposed based on the presence and dynamics of a physisorbed arsenic (PA) riding the growth surface which dictates the incorporation and concentration of antisites and the RHEED oscillations (ROs) behavior. The dependence of antisite concentrations on growth parameters can be explained based on the saturation of the PA layer coverage at a monolayer and the competing rate processes such as the incorporation into and evaporation of antisite arsenic from the crystalline surface. The RHEED intensity is computed based on kinematical theory of electron diffraction with different interplanar distances for the PA layer (2.48A) and the crystal (1.41A). At temperatures and beam equivalent pressures (BEP)s when the surface coverage is 0.5, the resulting RHEED reflection contributions from both surfaces covered by the PA layer and the crystal interfere destructively to result in no ROs."],"dc:format":["pdf"],"dc:identifier":["10.25669/uu20-4068","https://oasis.library.unlv.edu/rtds/934","https://oasis.library.unlv.edu/context/rtds/article/1933/viewcontent/uc.pdf"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Low-temperature molecular beam epitaxy of gallium arsenide Antisite incorporation and Rheed oscillations: A theoretical study"],"dc:type":["Text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:24:53Z"}