{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-1510"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-1510","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors","abstract":"The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: adsorption, surface migration and evaporation. In the study of surface roughening kinetics in GaAs (100), a transition temperature at which time averaged RHEED intensity is maximum was observed. The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate dependences of the phenomenon are also studied.","abstract_html":"The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: adsorption, surface migration and evaporation. In the study of surface roughening kinetics in GaAs (100), a transition temperature at which time averaged RHEED intensity is maximum was observed. The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate dependences of the phenomenon are also studied.","abstract_has_math":false,"creators":["Bendi, Shridhar Gangadhar"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["R. Venkatasubramanian"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1995,"date_issued":"1995-01-01T08:00:00Z","date_published":"1995-01-01T08:00:00Z","updated_at":"2026-07-24T05:24:37Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/511"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/511","href":"https://oasis.library.unlv.edu/rtds/511","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/4v8m-005q","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["R. 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The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate dependences of the phenomenon are also studied."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors"]}]}],"canonical_facts":{"dc:contributor":["R. Venkatasubramanian"],"dc:creator":["Bendi, Shridhar Gangadhar"],"dc:description.abstract":["The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: adsorption, surface migration and evaporation. In the study of surface roughening kinetics in GaAs (100), a transition temperature at which time averaged RHEED intensity is maximum was observed. The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate dependences of the phenomenon are also studied."],"dc:format":["pdf"],"dc:identifier":["10.25669/4v8m-005q","https://oasis.library.unlv.edu/rtds/511","https://oasis.library.unlv.edu/context/rtds/article/1510/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["A theoretical study of surface kinetic processes in the Mbe growth of compound semiconductors"],"dc:type":["Text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:24:37Z"}