{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-1138"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-1138","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"A multisubband self-consistent two-dimensional numerical model for Hemt including intersubband and intrasubband scattering mechanisms in the quantum well","abstract":"The previous one-subband model is extended to include transport of electrons in the quantum well with two subbands. The two higher moments of Boltzmann Transport Equations are solved for the two lowest subbands and the bulk system. The Schrodinger's and Poisson's Equations are solved self-consistently. The wavefunctions obtained are used to calculate the ionized impurity and the polar optical-phonon scattering mechanisms. The scattering rates obtained are in good agreement with those reported by Yokoyama and Hess. Coupling terms between the two subbands in the quantum well and the bulk system are derived from the scattering rates; We obtain lower transconductance and unity gain frequency which were overestimated in the previous model. At a gate bias of 0.625 V, we obtained a transconductance of 316 mS/mm, a gate capacitance of 17.68 pF/cm, and a unity-gain frequency of 28.44 GHz. (Abstract shortened with permission of author.).","abstract_html":"The previous one-subband model is extended to include transport of electrons in the quantum well with two subbands. The two higher moments of Boltzmann Transport Equations are solved for the two lowest subbands and the bulk system. The Schrodinger's and Poisson's Equations are solved self-consistently. The wavefunctions obtained are used to calculate the ionized impurity and the polar optical-phonon scattering mechanisms. The scattering rates obtained are in good agreement with those reported by Yokoyama and Hess. Coupling terms between the two subbands in the quantum well and the bulk system are derived from the scattering rates; We obtain lower transconductance and unity gain frequency which were overestimated in the previous model. At a gate bias of 0.625 V, we obtained a transconductance of 316 mS/mm, a gate capacitance of 17.68 pF/cm, and a unity-gain frequency of 28.44 GHz. (Abstract shortened with permission of author.).","abstract_has_math":false,"creators":["Arman, Helen"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Computer Science and Electrical Engineering","degree_department":null,"school":null,"contributors":["Abdol Rahim Khoie"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":1991,"date_issued":"1991-01-01T08:00:00Z","date_published":"1991-01-01T08:00:00Z","updated_at":"2026-07-24T05:24:07Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/139"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/139","href":"https://oasis.library.unlv.edu/rtds/139","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/ie0h-vgnq","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abdol Rahim Khoie"]},{"key":"dc:creator","label":"Author","values":["Arman, Helen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Computer Science and Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (MS)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25669/ie0h-vgnq","https://oasis.library.unlv.edu/rtds/139","https://oasis.library.unlv.edu/context/rtds/article/1138/viewcontent/uc.pdf"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The previous one-subband model is extended to include transport of electrons in the quantum well with two subbands. The two higher moments of Boltzmann Transport Equations are solved for the two lowest subbands and the bulk system. The Schrodinger's and Poisson's Equations are solved self-consistently. The wavefunctions obtained are used to calculate the ionized impurity and the polar optical-phonon scattering mechanisms. The scattering rates obtained are in good agreement with those reported by Yokoyama and Hess. Coupling terms between the two subbands in the quantum well and the bulk system are derived from the scattering rates; We obtain lower transconductance and unity gain frequency which were overestimated in the previous model. At a gate bias of 0.625 V, we obtained a transconductance of 316 mS/mm, a gate capacitance of 17.68 pF/cm, and a unity-gain frequency of 28.44 GHz. (Abstract shortened with permission of author.)."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["A multisubband self-consistent two-dimensional numerical model for Hemt including intersubband and intrasubband scattering mechanisms in the quantum well"]}]}],"canonical_facts":{"dc:contributor":["Abdol Rahim Khoie"],"dc:creator":["Arman, Helen"],"dc:description.abstract":["The previous one-subband model is extended to include transport of electrons in the quantum well with two subbands. The two higher moments of Boltzmann Transport Equations are solved for the two lowest subbands and the bulk system. The Schrodinger's and Poisson's Equations are solved self-consistently. The wavefunctions obtained are used to calculate the ionized impurity and the polar optical-phonon scattering mechanisms. The scattering rates obtained are in good agreement with those reported by Yokoyama and Hess. Coupling terms between the two subbands in the quantum well and the bulk system are derived from the scattering rates; We obtain lower transconductance and unity gain frequency which were overestimated in the previous model. At a gate bias of 0.625 V, we obtained a transconductance of 316 mS/mm, a gate capacitance of 17.68 pF/cm, and a unity-gain frequency of 28.44 GHz. (Abstract shortened with permission of author.)."],"dc:format":["pdf"],"dc:identifier":["10.25669/ie0h-vgnq","https://oasis.library.unlv.edu/rtds/139","https://oasis.library.unlv.edu/context/rtds/article/1138/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["A multisubband self-consistent two-dimensional numerical model for Hemt including intersubband and intrasubband scattering mechanisms in the quantum well"],"dc:type":["Text"],"thesis:degree_discipline":["Computer Science and Electrical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:24:07Z"}