{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/99540"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/99540","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Self-rolled-up membrane (S-RuM) capacitors and filters for radio frequency communication","abstract":"Self-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.","abstract_html":"Self-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.","abstract_has_math":false,"creators":["Li, Moyang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2018,"date_issued":"2018-03-13T17:35:58Z","date_published":"2018-03-13T17:35:58Z","updated_at":"2026-07-22T22:24:37Z","subjects":["Self-rolled-up membrane (s-RuM)","Capacitors","Filters"],"languages":["en"],"rights":["Please don't disclose the content within 2 years of time.","Copyright 2017 Moyang Li"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/99540","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Li, Moyang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2018-03-13T17:35:58Z","2020-03-14T09:15:22Z","2017-12-15","2017-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Self-rolled-up membrane (s-RuM)","Capacitors","Filters"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Please don't disclose the content within 2 years of time.","Copyright 2017 Moyang Li"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/99540"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Self-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2019-12-01","The student, Moyang Li, accepted the attached license on 2017-12-15 at 09:32.","The student, Moyang Li, submitted this Thesis for approval on 2017-12-15 at 09:45.","This Thesis was approved for publication on 2017-12-15 at 09:53.","DSpace SAF Submission Ingestion Package generated from Vireo submission #11992 on 2018-03-13 at 10:38:29","Made available in DSpace on 2018-03-13T17:35:58Z (GMT). No. of bitstreams: 2 LI-THESIS-2017.pdf: 5734899 bytes, checksum: b43ef276b84fb33584807008ed008278 (MD5) LICENSE.txt: 4206 bytes, checksum: fd8709b8106b4e3db45b887b541c0747 (MD5) Previous issue date: 2017-12-15","Embargo set by: Seth Robbins for item 105509 Lift date: 2020-03-13T17:36:05Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 105509 on 2020-03-14T09:15:22Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Self-rolled-up membrane (S-RuM) capacitors and filters for radio frequency communication"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling"],"dc:creator":["Li, Moyang"],"dc:date":["2018-03-13T17:35:58Z","2020-03-14T09:15:22Z","2017-12-15","2017-12"],"dc:description":["Self-rolled-up membrane (S-RuM) is a novel technology to build precisely controllable three- dimensional (3D) micro-structures. This technology finds wide applications in passive electronics, photonics, and neural interfaces, and achieves great device size reduction and performance enhancement. For passive electronics, devices based on S-RuM utilize electromagnetic energy well- confined in the device tubular cavity with extremely high efficiency, and break the footprint and parasitic effect limit set by conventional planar devices. S-RuM inductors and capacitors can reach self- resonant frequency up to 60 GHz, Q factor up to 80, and with footprint one hundredth that of the state- of-the-art 2D counterparts. This thesis illustrates the working mechanism of S-RuM technology first, and then introduces S-RuM passive electronic devices for radio frequency (RF) application. Current approaches to improve RF passive device performance are discussed. Designs of capacitors and filters based on S-RuM are demonstrated, followed by simulation and lab measurement results. Challenges associated with S-RuM passive electronics are addressed and solutions are proposed. Future work and potential wearable device applications are summarized.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2019-12-01","The student, Moyang Li, accepted the attached license on 2017-12-15 at 09:32.","The student, Moyang Li, submitted this Thesis for approval on 2017-12-15 at 09:45.","This Thesis was approved for publication on 2017-12-15 at 09:53.","DSpace SAF Submission Ingestion Package generated from Vireo submission #11992 on 2018-03-13 at 10:38:29","Made available in DSpace on 2018-03-13T17:35:58Z (GMT). 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