{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/95598"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/95598","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation","abstract":"High-speed optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser offers a unique voltage modulation scheme through photon-assisted tunneling at the base-collector junction, which could potentially reshape the device operation principles. This work reports the quantitative analysis of the transistor laser photon-assisted tunneling effect and its implications for future optoelectronic applications.","abstract_html":"High-speed optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser offers a unique voltage modulation scheme through photon-assisted tunneling at the base-collector junction, which could potentially reshape the device operation principles. This work reports the quantitative analysis of the transistor laser photon-assisted tunneling effect and its implications for future optoelectronic applications.","abstract_has_math":false,"creators":["Qiu, Junyi"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-03-01T17:01:48Z","date_published":"2017-03-01T17:01:48Z","updated_at":"2026-07-22T22:26:37Z","subjects":["Transistor Laser","Photon-Assisted Tunneling"],"languages":["en"],"rights":["Copyright 2016 Junyi Qiu"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/95598","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Qiu, Junyi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2017-03-01T17:01:48Z","2019-03-02T10:15:14Z","2016-12-05","2016-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Transistor Laser","Photon-Assisted Tunneling"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Junyi Qiu"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/95598"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["High-speed optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser offers a unique voltage modulation scheme through photon-assisted tunneling at the base-collector junction, which could potentially reshape the device operation principles. This work reports the quantitative analysis of the transistor laser photon-assisted tunneling effect and its implications for future optoelectronic applications.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2018-12-01","The student, Junyi Qiu, accepted the attached license on 2016-11-30 at 17:11.","The student, Junyi Qiu, submitted this Thesis for approval on 2016-11-30 at 17:17.","This Thesis was approved for publication on 2016-12-05 at 16:42.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10385 on 2017-02-28 at 14:42:36","Made available in DSpace on 2017-03-01T17:01:48Z (GMT). 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The technology of diode laser has been limited by its current modulation scheme in which the carrier recombination lifetime in the active region governs the ultimate speed of operation. The transistor laser, due to its enhanced carrier recombination in the bipolar junction transistor base region, is a promising candidate to replace the diode laser for high-speed optical transmitters. It was recently found that the transistor laser offers a unique voltage modulation scheme through photon-assisted tunneling at the base-collector junction, which could potentially reshape the device operation principles. This work reports the quantitative analysis of the transistor laser photon-assisted tunneling effect and its implications for future optoelectronic applications.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2018-12-01","The student, Junyi Qiu, accepted the attached license on 2016-11-30 at 17:11.","The student, Junyi Qiu, submitted this Thesis for approval on 2016-11-30 at 17:17.","This Thesis was approved for publication on 2016-12-05 at 16:42.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10385 on 2017-02-28 at 14:42:36","Made available in DSpace on 2017-03-01T17:01:48Z (GMT). No. of bitstreams: 2 QIU-THESIS-2016.pdf: 983735 bytes, checksum: 0bf599adaffa6d1d7f116487b61cd16f (MD5) LICENSE.txt: 4206 bytes, checksum: 4273c29807ba7ee1de06eda3acce52fd (MD5) Previous issue date: 2016-12-05","Embargo set by: Seth Robbins for item 98714 Lift date: 2019-03-01T17:02:22Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 98714 Lift date: 2019-03-01T17:03:32Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 98714 Lift date: 2019-03-01T17:05:02Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Embargo set by: Seth Robbins for item 98714 Lift date: 2019-03-01T17:06:55Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 98714 on 2019-03-02T10:15:14Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/95598"],"dc:language":["en"],"dc:rights":["Copyright 2016 Junyi Qiu"],"dc:subject":["Transistor Laser","Photon-Assisted Tunneling"],"dc:title":["Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:37Z"}