{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/95585"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/95585","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Surface-mediated mechanisms for defect engineering in zinc oxide","abstract":"The technological usefulness of a solid often depends upon the types and concentrations of the defects it contains. In semiconducting metal oxides like zinc oxide, the concentration and diffusion of oxygen point defects, like interstitials and vacancies, play a central role in various physical phenomena, such as gas sensing, bipolar switching, photoluminescence and photocatalysis. Defect engineering in metal oxides aims at manipulating material properties through controlling the defects’ type, concentration, charge, spatial distribution, and mobility. A specific challenge that inhibits performance improvement in metal oxide devices for microelectronics, photonics, and photocatalysis usages is that bulk oxygen vacancies (VO) are typically numerous and serve as carrier recombination centers or electron current scatterers. One solution suggested by our laboratory is to thermally inject highly mobile charged oxygen interstitials (Oi) through metal oxide surfaces from the gas phase to annihilate VO in the underlying bulk. Developing novel mechanisms to control such diffusion process would be crucial in tailoring material defect chemistry for real life applications. The present work demostrates two special surface-based control mechanisms for this purpose in the case of zinc oxide: near-surface electrostatics and the chemical state of surface active sites.","abstract_html":"The technological usefulness of a solid often depends upon the types and concentrations of the defects it contains. In semiconducting metal oxides like zinc oxide, the concentration and diffusion of oxygen point defects, like interstitials and vacancies, play a central role in various physical phenomena, such as gas sensing, bipolar switching, photoluminescence and photocatalysis. Defect engineering in metal oxides aims at manipulating material properties through controlling the defects’ type, concentration, charge, spatial distribution, and mobility. A specific challenge that inhibits performance improvement in metal oxide devices for microelectronics, photonics, and photocatalysis usages is that bulk oxygen vacancies (VO) are typically numerous and serve as carrier recombination centers or electron current scatterers. One solution suggested by our laboratory is to thermally inject highly mobile charged oxygen interstitials (Oi) through metal oxide surfaces from the gas phase to annihilate VO in the underlying bulk. Developing novel mechanisms to control such diffusion process would be crucial in tailoring material defect chemistry for real life applications. The present work demostrates two special surface-based control mechanisms for this purpose in the case of zinc oxide: near-surface electrostatics and the chemical state of surface active sites.","abstract_has_math":false,"creators":["Li, Ming"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Seebauer, Edmund G.","Yang, Hong","Flaherty, David W.","Ertekin, Elif"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-03-01T17:01:33Z","date_published":"2017-03-01T17:01:33Z","updated_at":"2026-07-22T22:26:37Z","subjects":["Defect engineering","Surface science","Metal oxides","Zinc oxide","Oxygen interstitial","Oxygen diffusion","Isotope gas-solid exchange"],"languages":["en"],"rights":["Copyright 2016 Ming Li"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/95585","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Seebauer, Edmund G.","Yang, Hong","Flaherty, David W.","Ertekin, Elif"]},{"key":"dc:creator","label":"Author","values":["Li, Ming"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2017-03-01T17:01:33Z","2019-03-02T10:15:14Z","2016-11-23","2016-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Defect engineering","Surface science","Metal oxides","Zinc oxide","Oxygen interstitial","Oxygen diffusion","Isotope gas-solid exchange"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Ming Li"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/95585"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The technological usefulness of a solid often depends upon the types and concentrations of the defects it contains. In semiconducting metal oxides like zinc oxide, the concentration and diffusion of oxygen point defects, like interstitials and vacancies, play a central role in various physical phenomena, such as gas sensing, bipolar switching, photoluminescence and photocatalysis. Defect engineering in metal oxides aims at manipulating material properties through controlling the defects’ type, concentration, charge, spatial distribution, and mobility. A specific challenge that inhibits performance improvement in metal oxide devices for microelectronics, photonics, and photocatalysis usages is that bulk oxygen vacancies (VO) are typically numerous and serve as carrier recombination centers or electron current scatterers. One solution suggested by our laboratory is to thermally inject highly mobile charged oxygen interstitials (Oi) through metal oxide surfaces from the gas phase to annihilate VO in the underlying bulk. Developing novel mechanisms to control such diffusion process would be crucial in tailoring material defect chemistry for real life applications. The present work demostrates two special surface-based control mechanisms for this purpose in the case of zinc oxide: near-surface electrostatics and the chemical state of surface active sites.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2018-12-01","The student, Ming Li, accepted the attached license on 2016-11-22 at 20:12.","The student, Ming Li, submitted this Dissertation for approval on 2016-11-22 at 20:27.","This Dissertation was approved for publication on 2016-11-23 at 13:24.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10302 on 2017-02-28 at 14:42:01","Made available in DSpace on 2017-03-01T17:01:33Z (GMT). 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In semiconducting metal oxides like zinc oxide, the concentration and diffusion of oxygen point defects, like interstitials and vacancies, play a central role in various physical phenomena, such as gas sensing, bipolar switching, photoluminescence and photocatalysis. Defect engineering in metal oxides aims at manipulating material properties through controlling the defects’ type, concentration, charge, spatial distribution, and mobility. A specific challenge that inhibits performance improvement in metal oxide devices for microelectronics, photonics, and photocatalysis usages is that bulk oxygen vacancies (VO) are typically numerous and serve as carrier recombination centers or electron current scatterers. One solution suggested by our laboratory is to thermally inject highly mobile charged oxygen interstitials (Oi) through metal oxide surfaces from the gas phase to annihilate VO in the underlying bulk. Developing novel mechanisms to control such diffusion process would be crucial in tailoring material defect chemistry for real life applications. The present work demostrates two special surface-based control mechanisms for this purpose in the case of zinc oxide: near-surface electrostatics and the chemical state of surface active sites.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2018-12-01","The student, Ming Li, accepted the attached license on 2016-11-22 at 20:12.","The student, Ming Li, submitted this Dissertation for approval on 2016-11-22 at 20:27.","This Dissertation was approved for publication on 2016-11-23 at 13:24.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10302 on 2017-02-28 at 14:42:01","Made available in DSpace on 2017-03-01T17:01:33Z (GMT). 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