{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/95466"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/95466","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels","abstract":"This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs to form AlGaAs/GaAs NW high-electron mobility channels. Radio frequency (RF) transistors are fabricated and show excellent dc and high-frequency performance. An fmax > 75 GHz with < 2 V supply voltage and ION/IOFF > 104 is measured which is superior compared to carbon-based nanoelectronics and “spin-on III-V NWs”. A comprehensive small-signal model is used to extract the contributing and limiting factors to the RF performance of AlGaAs/GaAs NW-array transistors and predict future performance. Finally, a process is developed to show that III-V NWs on sacrificial epitaxial templates can be transferred to arbitrary substrates. Top-down NWs were formed from Sn-doped Ga2O3 homoepitaxially grown on semi-insulating beta-phase Ga2O3 substrates by metal-organic vapor phase epitaxy. First, conventional planar transistors were fabricated from a sample set to characterize and understand the electrical performance as a function of Sn-doping and epitaxial channel thickness. Second, the high-critical field strength was evaluated to highlight the benefit of using Ga2O3 as a disruptive technology to GaN and SiC. Lastly, the planar transistor results feed into a design for a top-down NW-array transistor. The Ga2O3 NW-arrays were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel.","abstract_html":"This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs to form AlGaAs/GaAs NW high-electron mobility channels. Radio frequency (RF) transistors are fabricated and show excellent dc and high-frequency performance. An fmax &gt; 75 GHz with &lt; 2 V supply voltage and ION/IOFF &gt; 104 is measured which is superior compared to carbon-based nanoelectronics and “spin-on III-V NWs”. A comprehensive small-signal model is used to extract the contributing and limiting factors to the RF performance of AlGaAs/GaAs NW-array transistors and predict future performance. Finally, a process is developed to show that III-V NWs on sacrificial epitaxial templates can be transferred to arbitrary substrates. Top-down NWs were formed from Sn-doped Ga2O3 homoepitaxially grown on semi-insulating beta-phase Ga2O3 substrates by metal-organic vapor phase epitaxy. First, conventional planar transistors were fabricated from a sample set to characterize and understand the electrical performance as a function of Sn-doping and epitaxial channel thickness. Second, the high-critical field strength was evaluated to highlight the benefit of using Ga2O3 as a disruptive technology to GaN and SiC. Lastly, the planar transistor results feed into a design for a top-down NW-array transistor. The Ga2O3 NW-arrays were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel.","abstract_has_math":false,"creators":["Chabak, Kelson D"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling","Rogers, John A.","Dallesasse, John","Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-03-01T16:36:46Z","date_published":"2017-03-01T16:36:46Z","updated_at":"2026-07-22T22:26:37Z","subjects":["nanowire transistor","High-electron-mobility transistor (HEMT)","Fin field effect transistor (finFET)","vapor-liquid-solid","gallium oxide","Metal–oxide–semiconductor field-effect transistor (MOSFET)","wrap-gate"],"languages":["en"],"rights":["Copyright 2016 Kelson Dean Chabak"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/95466","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling","Rogers, John A.","Dallesasse, John","Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Chabak, Kelson D"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2017-03-01T16:36:46Z","2019-03-02T10:15:30Z","2016-11-09","2016-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["nanowire transistor","High-electron-mobility transistor (HEMT)","Fin field effect transistor (finFET)","vapor-liquid-solid","gallium oxide","Metal–oxide–semiconductor field-effect transistor (MOSFET)","wrap-gate"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Kelson Dean Chabak"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/95466"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs to form AlGaAs/GaAs NW high-electron mobility channels. Radio frequency (RF) transistors are fabricated and show excellent dc and high-frequency performance. An fmax > 75 GHz with < 2 V supply voltage and ION/IOFF > 104 is measured which is superior compared to carbon-based nanoelectronics and “spin-on III-V NWs”. A comprehensive small-signal model is used to extract the contributing and limiting factors to the RF performance of AlGaAs/GaAs NW-array transistors and predict future performance. Finally, a process is developed to show that III-V NWs on sacrificial epitaxial templates can be transferred to arbitrary substrates. Top-down NWs were formed from Sn-doped Ga2O3 homoepitaxially grown on semi-insulating beta-phase Ga2O3 substrates by metal-organic vapor phase epitaxy. First, conventional planar transistors were fabricated from a sample set to characterize and understand the electrical performance as a function of Sn-doping and epitaxial channel thickness. Second, the high-critical field strength was evaluated to highlight the benefit of using Ga2O3 as a disruptive technology to GaN and SiC. Lastly, the planar transistor results feed into a design for a top-down NW-array transistor. The Ga2O3 NW-arrays were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Kelson Chabak, accepted the attached license on 2016-11-08 at 06:21.","The student, Kelson Chabak, submitted this Dissertation for approval on 2016-11-08 at 06:23.","This Dissertation was approved for publication on 2016-11-09 at 11:40.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10223 on 2017-02-28 at 14:36:14","Made available in DSpace on 2017-03-01T16:36:46Z (GMT). No. of bitstreams: 6 CHABAK-DISSERTATION-2016.pdf: 5633629 bytes, checksum: 6c333b4fe2df6bff60d5cfe9011ecb3f (MD5) APL_RightsLink Printable License.pdf: 151632 bytes, checksum: 79e037c33d9e5f5e129433a09b153ef2 (MD5) IEEE_Rightslink_by_Copyright_Clearance_Center.pdf: 142979 bytes, checksum: 5eaef0979c96e42cdeb803730fff2427 (MD5) IOP permissions.pdf: 183469 bytes, checksum: 182ccd7b02b306f1c939ab47ea1af779 (MD5) LICENSE.txt: 4210 bytes, checksum: 25bf4c2c84149ef95822e5bad2b343f6 (MD5) NanoLetters_Rightslink_by_Copyright_Clearance_Center.pdf: 139903 bytes, checksum: 5ee7417327eb8e40034a6ce033f5a608 (MD5) Previous issue date: 2016-11-09","Embargo set by: Seth Robbins for item 98582 Lift date: 2019-03-01T16:37:19Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 98582 on 2019-03-02T10:15:30Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling","Rogers, John A.","Dallesasse, John","Feng, Milton"],"dc:creator":["Chabak, Kelson D"],"dc:date":["2017-03-01T16:36:46Z","2019-03-02T10:15:30Z","2016-11-09","2016-12"],"dc:description":["This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois Urbana-Champaign (UIUC). The top-down NW research approach involves plasma etching of an emerging wide-bandgap material, Gallium Oxide (Ga2O3), to make arrays of NW channels (or fins) for high-power electronics. Bottom-up AlGaAs/GaAs heterostructure core-shell planar NWs are demonstrated on a wafer scale with excellent yield. Their placement is determined by lithographically patterning an array of Au seeds on semi-insulating GaAs substrate. The GaAs NWs assemble by lateral epitaxy via a vapor-liquid-solid mechanism and align in parallel arrays as a result of the (100) GaAs crystal plane orientation; then, a thin-film AlGaAs layer conforms to the GaAs NWs to form AlGaAs/GaAs NW high-electron mobility channels. Radio frequency (RF) transistors are fabricated and show excellent dc and high-frequency performance. An fmax > 75 GHz with < 2 V supply voltage and ION/IOFF > 104 is measured which is superior compared to carbon-based nanoelectronics and “spin-on III-V NWs”. A comprehensive small-signal model is used to extract the contributing and limiting factors to the RF performance of AlGaAs/GaAs NW-array transistors and predict future performance. Finally, a process is developed to show that III-V NWs on sacrificial epitaxial templates can be transferred to arbitrary substrates. Top-down NWs were formed from Sn-doped Ga2O3 homoepitaxially grown on semi-insulating beta-phase Ga2O3 substrates by metal-organic vapor phase epitaxy. First, conventional planar transistors were fabricated from a sample set to characterize and understand the electrical performance as a function of Sn-doping and epitaxial channel thickness. Second, the high-critical field strength was evaluated to highlight the benefit of using Ga2O3 as a disruptive technology to GaN and SiC. Lastly, the planar transistor results feed into a design for a top-down NW-array transistor. The Ga2O3 NW-arrays were formed by BCl3 plasma etching. A new wrap-gate transistor demonstrates normally-off (enhancement-mode) operation with a high breakdown voltage exceeding 600 V which is superior to any transistor using a 3D channel.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Kelson Chabak, accepted the attached license on 2016-11-08 at 06:21.","The student, Kelson Chabak, submitted this Dissertation for approval on 2016-11-08 at 06:23.","This Dissertation was approved for publication on 2016-11-09 at 11:40.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10223 on 2017-02-28 at 14:36:14","Made available in DSpace on 2017-03-01T16:36:46Z (GMT). No. of bitstreams: 6 CHABAK-DISSERTATION-2016.pdf: 5633629 bytes, checksum: 6c333b4fe2df6bff60d5cfe9011ecb3f (MD5) APL_RightsLink Printable License.pdf: 151632 bytes, checksum: 79e037c33d9e5f5e129433a09b153ef2 (MD5) IEEE_Rightslink_by_Copyright_Clearance_Center.pdf: 142979 bytes, checksum: 5eaef0979c96e42cdeb803730fff2427 (MD5) IOP permissions.pdf: 183469 bytes, checksum: 182ccd7b02b306f1c939ab47ea1af779 (MD5) LICENSE.txt: 4210 bytes, checksum: 25bf4c2c84149ef95822e5bad2b343f6 (MD5) NanoLetters_Rightslink_by_Copyright_Clearance_Center.pdf: 139903 bytes, checksum: 5ee7417327eb8e40034a6ce033f5a608 (MD5) Previous issue date: 2016-11-09","Embargo set by: Seth Robbins for item 98582 Lift date: 2019-03-01T16:37:19Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 98582 on 2019-03-02T10:15:30Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/95466"],"dc:language":["en"],"dc:rights":["Copyright 2016 Kelson Dean Chabak"],"dc:subject":["nanowire transistor","High-electron-mobility transistor (HEMT)","Fin field effect transistor (finFET)","vapor-liquid-solid","gallium oxide","Metal–oxide–semiconductor field-effect transistor (MOSFET)","wrap-gate"],"dc:title":["Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:37Z"}