{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/92817"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/92817","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Overview and development of a wide bandgap, high temperature circuit and measurement solution","abstract":"This thesis takes a first step in investigating the design and feasibility of a high temperature power converter for various applications. From the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when compared to traditional silicon (Si) based power converters. Although high temperature circuits have been designed, a full system overview, measurement practices, and transient switching characteristics have yet to be simply summed up in a single system-design oriented source. As a first step in providing a useful design tool, this thesis provides an overview of high temperature materials, circuit attach methods and switching characteristics of GaN devices at temperatures which push the system limits. Further suggestions for future work are provided as well to help promote progress in the research area.","abstract_html":"This thesis takes a first step in investigating the design and feasibility of a high temperature power converter for various applications. From the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when compared to traditional silicon (Si) based power converters. Although high temperature circuits have been designed, a full system overview, measurement practices, and transient switching characteristics have yet to be simply summed up in a single system-design oriented source. As a first step in providing a useful design tool, this thesis provides an overview of high temperature materials, circuit attach methods and switching characteristics of GaN devices at temperatures which push the system limits. Further suggestions for future work are provided as well to help promote progress in the research area.","abstract_has_math":false,"creators":["Liederbach, Ross Michael"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Krein, Philip T."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-11-10T17:54:58Z","date_published":"2016-11-10T17:54:58Z","updated_at":"2026-07-22T22:26:35Z","subjects":["Wide Bandgap","High Temperature"],"languages":["en"],"rights":["Copyright 2016 Ross Liederbach"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/92817","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Krein, Philip T."]},{"key":"dc:creator","label":"Author","values":["Liederbach, Ross Michael"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2016-11-10T17:54:58Z","2016-07-14","2016-08"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Wide Bandgap","High Temperature"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Ross Liederbach"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/92817"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis takes a first step in investigating the design and feasibility of a high temperature power converter for various applications. From the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when compared to traditional silicon (Si) based power converters. Although high temperature circuits have been designed, a full system overview, measurement practices, and transient switching characteristics have yet to be simply summed up in a single system-design oriented source. As a first step in providing a useful design tool, this thesis provides an overview of high temperature materials, circuit attach methods and switching characteristics of GaN devices at temperatures which push the system limits. Further suggestions for future work are provided as well to help promote progress in the research area.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-11-09 without embargo terms","The student, Ross Liederbach, accepted the attached license on 2016-07-12 at 13:02.","The student, Ross Liederbach, submitted this Thesis for approval on 2016-07-12 at 13:10.","This Thesis was approved for publication on 2016-07-14 at 12:14.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9893 on 2016-11-09 at 10:24:15","Made available in DSpace on 2016-11-10T17:54:58Z (GMT). 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From the dawn of wide bandgap materials, primarily gallium nitride (GaN) and silicon carbide (SiC), research has pushed toward high temperature power circuit operation to either reduce cooling system requirements or operate in high temperature environments due to their theoretically higher temperature capacity when compared to traditional silicon (Si) based power converters. Although high temperature circuits have been designed, a full system overview, measurement practices, and transient switching characteristics have yet to be simply summed up in a single system-design oriented source. As a first step in providing a useful design tool, this thesis provides an overview of high temperature materials, circuit attach methods and switching characteristics of GaN devices at temperatures which push the system limits. Further suggestions for future work are provided as well to help promote progress in the research area.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-11-09 without embargo terms","The student, Ross Liederbach, accepted the attached license on 2016-07-12 at 13:02.","The student, Ross Liederbach, submitted this Thesis for approval on 2016-07-12 at 13:10.","This Thesis was approved for publication on 2016-07-14 at 12:14.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9893 on 2016-11-09 at 10:24:15","Made available in DSpace on 2016-11-10T17:54:58Z (GMT). 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