{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/90497"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/90497","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Uncalibrated TCAD methodology for analysis of ESD protection devices","abstract":"In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation complexity and accuracy, 2D vs. 3D simulations, is examined in detail. TCAD simulation results for the GGNMOS in 32 nm CMOS technology is compared with published measurement results for methodology validation. The established TCAD methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to prove its consistency with TCAD prediction.","abstract_html":"In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation complexity and accuracy, 2D vs. 3D simulations, is examined in detail. TCAD simulation results for the GGNMOS in 32 nm CMOS technology is compared with published measurement results for methodology validation. The established TCAD methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to prove its consistency with TCAD prediction.","abstract_has_math":false,"creators":["Chen, Zaichen"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-07-07T19:53:15Z","date_published":"2016-07-07T19:53:15Z","updated_at":"2026-07-22T22:26:32Z","subjects":["ESD","TCAD"],"languages":["en"],"rights":["Copyright 2016 Zaichen Chen"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/90497","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Chen, Zaichen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2016-07-07T19:53:15Z","2016-04-04","2016-05"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["ESD","TCAD"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Zaichen Chen"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/90497"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation complexity and accuracy, 2D vs. 3D simulations, is examined in detail. TCAD simulation results for the GGNMOS in 32 nm CMOS technology is compared with published measurement results for methodology validation. The established TCAD methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to prove its consistency with TCAD prediction.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-07-07 without embargo terms","The student, Zaichen Chen, accepted the attached license on 2016-03-31 at 13:13.","The student, Zaichen Chen, submitted this Thesis for approval on 2016-03-31 at 13:17.","This Thesis was approved for publication on 2016-04-04 at 16:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9133 on 2016-07-07 at 13:28:30","Made available in DSpace on 2016-07-07T19:53:15Z (GMT). No. of bitstreams: 2 CHEN-THESIS-2016.pdf: 1268193 bytes, checksum: 8d0a41db054f599294a79a5486c57159 (MD5) LICENSE.txt: 4209 bytes, checksum: f58d29cfe9efa8c69241f793bc2ef766 (MD5) Previous issue date: 2016-04-04"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Uncalibrated TCAD methodology for analysis of ESD protection devices"]}]}],"canonical_facts":{"dc:creator":["Chen, Zaichen"],"dc:date":["2016-07-07T19:53:15Z","2016-04-04","2016-05"],"dc:description":["In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and parameters. A major trade-off between computation complexity and accuracy, 2D vs. 3D simulations, is examined in detail. TCAD simulation results for the GGNMOS in 32 nm CMOS technology is compared with published measurement results for methodology validation. The established TCAD methodology is then applied to ESD protection silicon controlled rectifier (SCR) devices to identify physical causes for high overshoot of a certain SCR layout, and to verify proposed improvements. The performance of the SCR with the improved layout structure is characterized in silicon to prove its consistency with TCAD prediction.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-07-07 without embargo terms","The student, Zaichen Chen, accepted the attached license on 2016-03-31 at 13:13.","The student, Zaichen Chen, submitted this Thesis for approval on 2016-03-31 at 13:17.","This Thesis was approved for publication on 2016-04-04 at 16:56.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9133 on 2016-07-07 at 13:28:30","Made available in DSpace on 2016-07-07T19:53:15Z (GMT). No. of bitstreams: 2 CHEN-THESIS-2016.pdf: 1268193 bytes, checksum: 8d0a41db054f599294a79a5486c57159 (MD5) LICENSE.txt: 4209 bytes, checksum: f58d29cfe9efa8c69241f793bc2ef766 (MD5) Previous issue date: 2016-04-04"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/90497"],"dc:language":["en"],"dc:rights":["Copyright 2016 Zaichen Chen"],"dc:subject":["ESD","TCAD"],"dc:title":["Uncalibrated TCAD methodology for analysis of ESD protection devices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:32Z"}