{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/88956"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/88956","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications","abstract":"Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07","abstract_html":"Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07","abstract_has_math":false,"creators":["Zhao, Xiang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engineering","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-03-02T19:33:17Z","date_published":"2016-03-02T19:33:17Z","updated_at":"2026-07-22T22:26:32Z","subjects":["Metal-Assisted Chemical Etching (MacEtch)","surface plasmon","optoelectronics","nano technology","Light-Emitting Diode (LED)"],"languages":["en"],"rights":["Copyright 2015 Xiang Zhao"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/88956","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Zhao, Xiang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2016-03-02T19:33:17Z","2015-10-07","2015-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Metal-Assisted Chemical Etching (MacEtch)","surface plasmon","optoelectronics","nano technology","Light-Emitting Diode (LED)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2015 Xiang Zhao"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/88956"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07","In this thesis, Metal-Assisted Chemical Etching (MacEtch) as a wet anisotropic etching technique which is very promising in fabricating high aspect ratio semiconductor nanostructures with less surface damage is introduced in terms of etching mechanism, effect of different etching parameters as well as detailed fabrication process. GaAs nanopillar LED fabricated by MacEtch exhibits better light extraction due to the large surface area of nanopillars and multiple scattering interactions. A novel structure is fabricated via a MacEtch process by which it is feasible to effectively “bury” patterned metal film into the semiconductor material. The resulting structures can be fabricated with subwavelength, nanoscale pitch and feature size, and with etch depths equal to or greater than the grating pitch. The buried extraordinary optical transmission (B-EOT) gratings are modeled using three-dimensional (3D) rigorous coupled wave analysis (RCWA) and characterized experimentally by angle-dependent Fourier transform infrared (FTIR) transmission spectroscopy with good agreement between the theoretical predictions and experimental results. B-EOT structures not only show significantly enhanced peak transmission when normalized to the open area of the metal film, but more importantly, peak transmission greater than that observed from the bare semiconductor surface. In a sense, the B-EOT structure combines the benefits of both moth-eye anti-reflection coatings and EOT-inspired spectral selectivity.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-03-02 without embargo terms","The student, Xiang Zhao, accepted the attached license on 2015-10-07 at 10:53.","The student, Xiang Zhao, submitted this Thesis for approval on 2015-10-07 at 11:00.","This Thesis was approved for publication on 2015-10-07 at 16:20.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8711 on 2016-03-02 at 12:49:26"]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling"],"dc:creator":["Zhao, Xiang"],"dc:date":["2016-03-02T19:33:17Z","2015-10-07","2015-12"],"dc:description":["Made available in DSpace on 2016-03-02T19:33:17Z (GMT). No. of bitstreams: 2 ZHAO-THESIS-2015.pdf: 2077971 bytes, checksum: 160453c3994747e9326d0908a0f90983 (MD5) LICENSE.txt: 4207 bytes, checksum: badcc874098be4440f0e37e192b9525d (MD5) Previous issue date: 2015-10-07","In this thesis, Metal-Assisted Chemical Etching (MacEtch) as a wet anisotropic etching technique which is very promising in fabricating high aspect ratio semiconductor nanostructures with less surface damage is introduced in terms of etching mechanism, effect of different etching parameters as well as detailed fabrication process. GaAs nanopillar LED fabricated by MacEtch exhibits better light extraction due to the large surface area of nanopillars and multiple scattering interactions. A novel structure is fabricated via a MacEtch process by which it is feasible to effectively “bury” patterned metal film into the semiconductor material. The resulting structures can be fabricated with subwavelength, nanoscale pitch and feature size, and with etch depths equal to or greater than the grating pitch. The buried extraordinary optical transmission (B-EOT) gratings are modeled using three-dimensional (3D) rigorous coupled wave analysis (RCWA) and characterized experimentally by angle-dependent Fourier transform infrared (FTIR) transmission spectroscopy with good agreement between the theoretical predictions and experimental results. B-EOT structures not only show significantly enhanced peak transmission when normalized to the open area of the metal film, but more importantly, peak transmission greater than that observed from the bare semiconductor surface. In a sense, the B-EOT structure combines the benefits of both moth-eye anti-reflection coatings and EOT-inspired spectral selectivity.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2016-03-02 without embargo terms","The student, Xiang Zhao, accepted the attached license on 2015-10-07 at 10:53.","The student, Xiang Zhao, submitted this Thesis for approval on 2015-10-07 at 11:00.","This Thesis was approved for publication on 2015-10-07 at 16:20.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8711 on 2016-03-02 at 12:49:26"],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/88956"],"dc:language":["en"],"dc:rights":["Copyright 2015 Xiang Zhao"],"dc:subject":["Metal-Assisted Chemical Etching (MacEtch)","surface plasmon","optoelectronics","nano technology","Light-Emitting Diode (LED)"],"dc:title":["Metal-assisted chemical etching of III-V semiconductor materials for optoelectronic applications"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:32Z"}