{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/88102"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/88102","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy","abstract":"Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.","abstract_html":"Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.","abstract_has_math":false,"creators":["Choi, Wonsik"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engineering","degree_department":null,"school":null,"contributors":["Li, Xiuling"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-29T20:38:48Z","date_published":"2015-09-29T20:38:48Z","updated_at":"2026-07-22T22:26:31Z","subjects":["selective lateral epitaxy (SLE)","semiconductor nanowires (SNWs)","metal -organic chemical vapor deposition (MOCVD)"],"languages":["en"],"rights":["Copyright 2015 Wonsik Choi"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/88102","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling"]},{"key":"dc:creator","label":"Author","values":["Choi, Wonsik"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-29T20:38:48Z","2015-08","2015-07-21","2015-8"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["selective lateral epitaxy (SLE)","semiconductor nanowires (SNWs)","metal -organic chemical vapor deposition (MOCVD)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2015 Wonsik Choi"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/88102"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2015-09-29 without embargo terms","The student, Wonsik Choi, accepted the attached license on 2015-07-21 at 13:25.","The student, Wonsik Choi, submitted this Thesis for approval on 2015-07-21 at 13:38.","This Thesis was approved for publication on 2015-07-21 at 13:46.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8587 on 2015-09-29 at 13:23:29","Made available in DSpace on 2015-09-29T20:38:48Z (GMT). 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However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping process. Utilizing monolithically grown lateral p-n junction vertical NW also has problem because the as-grown NWs are not compatible with conventional planar device processing. In this thesis research, arrays of lateral p-n junction planar GaAs NW diodes grown by selective lateral epitaxy (SLE) mechanism was developed to overcome the limitations of current lateral p-n junctions in thin films and vertical NWs. Size and position controlled array of lateral p-n junction planar GaAs NWs were monolithically grown on semi-insulating GaAs (100) substrate using metal-organic chemical vapor deposition (MOCVD). The realization of lateral p-n junction diodes was confirmed by measuring two terminal I-V characteristics of the devices. The device was turned on at 1.2 V of diode voltage, and the 106 of rectification ratio and 2.18 of ideality factor were measured. The forward-biased current scales with the number of contacted NWs. Finally, the doping concentration modulation capability on SLE grown planar p-n NWs were verified.","Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2015-09-29 without embargo terms","The student, Wonsik Choi, accepted the attached license on 2015-07-21 at 13:25.","The student, Wonsik Choi, submitted this Thesis for approval on 2015-07-21 at 13:38.","This Thesis was approved for publication on 2015-07-21 at 13:46.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8587 on 2015-09-29 at 13:23:29","Made available in DSpace on 2015-09-29T20:38:48Z (GMT). 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